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Lattice Disordering, Phase Transition, and Substrate Temperature Effects in MeV-ION-Implanted III-V Compound Semiconductors

Published online by Cambridge University Press:  26 February 2011

Fulin Xiong ,
C. J. Tsai ,
T. Vreeland Jr.  and
T. A. Tombrello
Fulin Xiong
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
C. J. Tsai
Affiliation:
California Institute of Technology, Pasadena, CA 91125
T. Vreeland Jr.
Affiliation:
California Institute of Technology, Pasadena, CA 91125
T. A. Tombrello
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

An experimental study of lattice disordering, the crystalline-to-amorphous (c-a) phase transition, and substrate temperature effects in MeV-ion-implanted III-V compound semiconductor crystals is presented. A comparison has been made between the GaAs and InP systems, which have been implanted with 2 MeV oxygen ions at either room temperature (RT) or near liquid nitrogen temperature (LT). A strong in situ dynamic annealing has been found in the RT implanted GaAs, and the LT implanted GaAs exhibits heterogeneous (at the end-of-range of the ions) and homogeneous (at the subsurface region) c-a phase transitions. In InP crystals, in situ annealing is much less pronounced in RT implantation, and dose-dependent damage nucleation and layer-by-layer amorphization take place. LT implantation results in lattice disordering and phase transition with a critical dose at least one order lower than that for GaAs. The mechanisms and kinetics of lattice disordering by ion irradiation are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 375
Copyright
Copyright © Materials Research Society 1991

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