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Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

Published online by Cambridge University Press:  25 February 2011

Li Xu ,
Peihsin Tsien  and
Zhijian Li
Li Xu
Affiliation:
Institute of Microelectronics, Peking University, Zhongguancun Village, Beijing 100871, China
Peihsin Tsien
Affiliation:
Institute of Microelectronics, Tsinghua University, Qinghuayuan Garden, Beijing 100084, China
Zhijian Li
Affiliation:
Institute of Microelectronics, Tsinghua University, Qinghuayuan Garden, Beijing 100084, China
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Abstract

By using rapid thermal annealing (RTA) we can obtain a me testable carrier concentration which well exceeds the solid solubility of arsenic dopant in silicon. The deactivation of such the supersaturated dopant, however, may result in relaxation of the metastable concentration. This paper describes lattice location of the deactivated arsenic atoms determined by channeling angular distribution. On the basis of the results for lattice site location the deactivation mechanism of supersaturated As in Si is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 195
Copyright
Copyright © Materials Research Society 1993

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References

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