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Lattice Parameter Variation in ScGaN Alloy Thin Films on MgO(001) Grown by RF Plasma Molecular Beam Epitaxy

Published online by Cambridge University Press:  31 January 2011

Costel Constantin
Affiliation:
constaco@shu.edu, Seton Hall University, 400 South Orange Ave. 129 McNulty Hall, South Orange, New Jersey, 07079, United States
Pak Jeongihm
Affiliation:
pakj@ohio.edu, Ohio University, Physics Department, Athens, Ohio, United States
Kangkang Wang
Affiliation:
kw136705@ohio.edu, Ohio University, Physics and Astronomy, Ohio University, Athens, Ohio, 45701, United States, 740-274-1061
Abhijit Chinchore
Affiliation:
ac904605@ohio.edu, Ohio University, Physics And Astronomy, Athens, Ohio, United States
Shi Meng
Affiliation:
shi@helios.phy.ohiou.edu, Ohio University, Physics Department, Athens, Ohio, United States
Arthur R. Smith
Affiliation:
asmith@helios.phy.ohiou.edu, Ohio University, Physics Department, Athens, Ohio, United States
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Abstract

We present the structural and surface characterization of the alloy formation of scandium gallium nitride ScxGa1-xN(001)/MgO(001) grown by radio-frequency molecular beam epitaxy over the Sc range of x = 0-100%. In-plane diffraction measurements show a clear face-centered cubic surface structure with single-crystalline epitaxial type of growth mode for all x; a diffuse/distinct transition in the surface structure occurs at near x = 0.5. This is consistent with out-of-plane diffraction measurements which show a linear variation of perpendicular lattice constant for x = 0 to 0.5, after which the out-of-plane lattice parameter becomes approximately constant. The x = 0.5 transition is interpreted as being related to the cross-over from zinc-blende to rock-salt structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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