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Lattice-Matched Heteroepitaxy of Wide Gap Ternary Compound Semiconductors

Published online by Cambridge University Press:  25 February 2011

Klaus J. Bachmann
Klaus J. Bachmann*
Affiliation:
Department of Materials Science and Engineering and Department of Chemical Engineering, North Carolina State University, Raleigh, North Carolina 27695–7914
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Abstract

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSixGe1-xP2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of CuzAg1-zGaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSixGe1-xP2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 707
Copyright
Copyright © Materials Research Society 1992

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