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Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Y. C. Kao ,
T. P. E. Broekaert ,
H. Y. Liu ,
S. Tang ,
I. H. Ho  and
G. B. Stringfellow
Y. C. Kao
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
T. P. E. Broekaert
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
H. Y. Liu
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
S. Tang
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
I. H. Ho
Affiliation:
University of Utah, College of Engineering, Salt Lake City, Utah 94112
G. B. Stringfellow
Affiliation:
University of Utah, College of Engineering, Salt Lake City, Utah 94112
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Abstract

In this paper, we report the MBE growth of high nitrogen content lattice-matched InAs1−xNx (x=0.38) single crystal epitaxial films on GaAs. The nitrogen incorporation is about an order higher than previously reported on other mixed group V nitride alloys. These data are consistent with a nitrogen solubility limit calculation in various III-V binary alloys, which predicts orders of magnitude higher nitrogen incorporation in InAs than any other alloys. InAsN growths were obtained using a modified ECR-MBE system with atomic-nitrogen generated by an ECR plasma source. Improved crystal quality was obtained using a “template” growth technique. An x-ray linewidth of 270 arc-s was achieved on a 0.4 μm thick InAs0.62N0.38/GaAs multi-layer structure. Hall effect data show these InAsN films are semi-metallic.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 335
Copyright
Copyright © Materials Research Society 1996

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References

1. Weyers, M., Sato, M., and Ando, H., Jpn. J. Appl. Phys. 31, L854 (1992).Google Scholar
2. Foxon, C. T., Cheng, T. S., Lacklison, D. E., Novikov, S. V., Johnson, D., Baba-Ali, N., Tansley, T. L., Hooper, S., and Challis, L. J., presented at the 1994 Electronic Materials Conference, Boulder, CO, 1994.Google Scholar
3. Kondow, M. Uomi, K., Hosomi, K., and Mozume, T., Jpn. J. Appl. Phys. 33, L1056 (1994).Google Scholar
4. Broekaert, T. P. E., Tang, S., Wallace, R. M., Beam, E. A. III, Duncan, W. M., Kao, Y. C., and Liu, H. Y., presented at the International Conference on Integrated Micro-Nanotechnology for Space Applications, Houston, TX, 1995 (Proceeding to be published).Google Scholar
5. Stringfellow, G. B., J. of Crystal. Growth 58, 194 (1983).Google Scholar
6. Baillargeon, J. N., Cheng, K. Y., Holfer, G. E., Pearah, P. J., Hsieh, K. C., Appl. Phys. Lett. 60, 2540 (1992).Google Scholar
7. Ho, I. H. and Stringfellow, G. B. (unpublished results).Google Scholar
8. Keating, P. N., Phys. Rev. 145, 637 (1966).Google Scholar