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Layer by Layer Amorphization in Si: Temperature, Ion Mass andFlux Effects

Published online by Cambridge University Press:  15 February 2011

A. Battaglia ,
G. Romano  and
S. U. Campisano
A. Battaglia
Affiliation:
Dipartimento di Fisica, Università di Catania, Corso Italia 57 195129, Catania, Italy
G. Romano
Affiliation:
Dipartimento di Fisica, Università di Catania, Corso Italia 57 195129, Catania, Italy
S. U. Campisano
Affiliation:
Dipartimento di Fisica, Università di Catania, Corso Italia 57 195129, Catania, Italy
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Abstract

The layer-by-layer amorphization process is explored in a temperature rangein which the kinetics of crystallization can be neglected. It has been foundthat the pure amorphization rate increases exponentially as the substratetemperature is decreased with an apparent activation energy of 0.48 eV.Moreover the rate increases with both the ion flux and the energy depositedinto elastic collisions. A phenomenological model is proposed to explain theexperimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 411
Copyright
Copyright © Materials Research Society 1994

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References

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