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Layered Poly/Amorphous Silicon Deposition Process for Improved Silicide Integrity

Published online by Cambridge University Press:  28 February 2011

P. K. Roy ,
A. K. Nanda  and
J. A. Taylor
P. K. Roy
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
A. K. Nanda
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
J. A. Taylor
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
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Abstract

This work describes an elegant way to control suicide integrity and the quality of the silicide/polySi or amorphous (α) Si interface by a multilayered deposition process. Structurally superior polySi/or-Si layer resulting from this process allows one to reduce the stack height of the polySi/α-Si layer without compromising suicide integrity and silicide/Si interfacial qualities.

Impact of layering during polySi/α-Si deposition on the suicided structure were evaluated from XRD, RBS, cross-sectional TEM, sheet resistance, and SIMS analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 647
Copyright
Copyright © Materials Research Society 1993

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References

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