Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-30T23:23:01.571Z Has data issue: false hasContentIssue false
  • English
  • Français

Lead Sulfide Quantum Dot Synthesis, Deposition, and Temperature Dependence Studies of the Stokes Shift

Published online by Cambridge University Press:  19 April 2012

Joanna S. Wang ,
Bruno Ullrich  and
Gail J. Brown
Joanna S. Wang
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, Wright Patterson AFB, OH 45433-7707, USA
Bruno Ullrich
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, Wright Patterson AFB, OH 45433-7707, USA
Gail J. Brown
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, Wright Patterson AFB, OH 45433-7707, USA
Get access

Abstract

We investigated the temperature dependence of the Stokes shift of PbS quantum dots (diameter 4.7 nm) deposited from solution on glass using a specially designed apparatus. By measuring the thermal alteration of the optical absorbance and photoluminescence in the range of 5 K – 300 K, we demonstrate that the Stokes shift shrinks from 135 meV at 5 K to 62 meV at 300 K. Extrapolation of the data presented predict an elimination temperature of the Stokes shift of about 460 K, corresponding to the thermal energy of the sum of prominent PbS phonon energies.

Keywords

photoemissionoptical propertieschemical synthesis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1409: Symposium CC – Functional Semiconductor Nanocrystals and Metal-Hybrid Structures , 2012 , mrsf11-1409-cc05-09
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES:

1. Peterson, J. J. and Krauss, T. D., Nano Lett. 6, 510 (2006).Google Scholar
2. Turyanska, L., Patanè, A., Henini, M., Hennequin, B. and Thomas, N. R., Appl. Phys. Lett. 90, 101913 (2007).Google Scholar
3. Gaponenko, M. S., Lutich, A. A., Tolstik, N. A., Onushchenko, A. A., Malyarevich, A. M., Petrov, E. P. and Yumashev, K. V., Phys. Rev. B 82, 125320 (2010).Google Scholar
4. Ullrich, B., Xiao, X. Y., and Brown, G. J., J. Appl. Phys. 108, 013525 (2010).Google Scholar
5. Ullrich, B., Wang, J. S., and Brown, G. J., Appl. Phys. Lett. 99, 081901 (2011).Google Scholar
6. Liu, C., Kwon, K., and Heo, J., J. Non-Cryst. Solids 355, 1880 (2009).Google Scholar
7. Zhang, J., Jiang, X., J. Phys. Chem. B 112, 9557 (2008).Google Scholar
8. Zhang, J. and Jiang, X., Appl. Phys. Lett. 92, 141108 (2008).Google Scholar
9. Dantas, N. O., de Paula, P. M. N., Silva, R. S., López-Richard, V., and Marques, G. E., J. Appl. Phys. 109, 024308 (2011).Google Scholar
10. Rakovich, Y. P., Donegan, J. F., Vasilevskiy, M. I., and Rogach, A. L., Phys. Stat. Sol. A 206, 2497 (2009).Google Scholar
11. Hines, M. A. and Scholes, G. D., Adv. Mater. 15(21), 1844, (2003).Google Scholar
12. Vainshtein, I. A., Zatsepin, A. F., and Kortov, V. S., Phys. Solid State 41, 907 (1999).Google Scholar
13. Madelung, O., Semiconductors: Data Handbook, 3 rd ed. (Springer, Berlin, 2004).Google Scholar
14. Fernée, M. J., Thomsen, E., Jensen, P., and Rubinsztein-Dunlop, H., Nanotech 17, 956 (2008).Google Scholar
15. Lobo, A., Muller, T., Nagel, M., Borchert, H., Hickey, S.G., and Weller, H., J. Phys. Chem. C 109, 17422 (2005).Google Scholar
16. Abel, K. A., Shan, J., Boyer, J.-C., Harris, F., and van Veggel, F. C. J. M., Chem. Mater. 20, 3794 (2008).Google Scholar