Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-28T21:01:50.881Z Has data issue: false hasContentIssue false
  • English
  • Français

Ligand Structure Effect on A Divalent Ruthenium Precursor for MOCVD

Published online by Cambridge University Press:  31 January 2011

Kazuhisa Kawano ,
Hiroaki Kosuge ,
Noriaki Oshima ,
Tadashi Arii ,
Yutaka Sawada  and
Hiroshi Funakubo
Kazuhisa Kawano
Affiliation:
kawano@tosoh.co.jp, TOSOH, Tokyo Research Laboratory, Ayase, Kanagawa, Japan
Hiroaki Kosuge
Affiliation:
h_kosuge@tosoh.co.jp, TOSOH, Tokyo Research Laboratory, Ayase, Kanagawa, Japan
Noriaki Oshima
Affiliation:
ohsima@tosoh.co.jp, TOSOH, Tokyo Research Laboratory, Ayase, Kanagawa, Japan
Tadashi Arii
Affiliation:
t-arii@rigaku.co.jp, Rigaku, Thermal Analysis Group, Akishima, Tokyo, Japan
Yutaka Sawada
Affiliation:
sawada@chem.t-kougei.ac.jp, Tokyo Polytechnic University, Atsugi, Kanagawa, Japan
Hiroshi Funakubo
Affiliation:
funakubo.h.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Yokohama, Japan
Get access

Abstract

Thermal properties of five divalent ruthenium precursors with three types of structures were examined by thermal analyses. Their volatilities and the relationships between their structure and thermal stability were compared by TG analysis. Precursor volatility was found to be inversely proportional to molecular weight. The DSC result showed that substituting a linear pentadienyl ligand for a cyclopentadienyl ligand decreased the thermal stability of a precursor and precursors could be liquefied by attaching an alkyl group longer than methyl group to a Cp ligand. As a result of TG-MS analyses for Ru(DMPD)(EtCp) and Ru(EtCp)2, 2,4-dimethyl-1,3-pentadiene was found to be a thermolysis product of Ru(DMPD)(EtCp) though no thermolysis products of Ru(EtCp)2 were observed. These results show that the volatility and decomposition temperature of a divalent ruthenium precursor can be designed by adjusting the precursor's structure.

Keywords

chemical vapor deposition (CVD) (deposition)Rumemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C09-11
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Aoyama, T., Saida, S., Okayama, Y., Fujisaki, M., Imai, K., and Arikado, T., J. Electrochem. Soc., 143, 977 (1996).Google Scholar
2 Yamaguchi, H., Lesaicherre, P. Y., Sakuma, T., Miyasaka, Y., Ishitani, A., and Yoshida, M., Jpn. J. Appl. Phys., 32, 4069 (1993).Google Scholar
3 Lesaicherre, P. Y., Yamamichi, S., Takemura, K., Yamaguchi, H., Tokashiki, K., Miyasaka, Y., Yoshida, M., and Ono, H., Integrated Ferroelectrics, 11, 81 (1995).Google Scholar
4 Pan, W. and B. Desu, S., J. Vac. Sci. and Technol., B12, 3208 (1994).Google Scholar
5 Vijay, D. P., Desu, S. B., and Pan, W., J. Electrochem. Soc., 140, 2635 (1993).Google Scholar
6 Saito, S. and Kuramasu, K., Jpn. J. Appl. Phys., 31, 135 (1992).Google Scholar
7 F. Scott, J., Morrison, F. D., Miyake, M., Zubko, P., Lou, Xiaojie, Kugler, V. M., Rios, S., Zhang, M., Tatsuta, T., Tsuji, O., and Leedham, T. J., J. Amer. Ceramic Soc., 88, 1691 (2005).Google Scholar
8 Kang, S. Y., Choi, K. H., Lee, S. H., Hwang, C. S., and Kim, H. J., J. Electrochem. Soc., 147, 1161 (2000).Google Scholar
9 Kadoshima, M., Nabatame, T., Hiratani, M., and Nakamura, Y., Jpn. J. Appl. Phys., Part 2, 41, L437 (2002).Google Scholar
10 Shibutami, T., Kawano, K., Oshima, N., Yokoyama, S., and Funakubo, H., Electrochem. Solid-State Lett., 6, C117 (2003).Google Scholar
11 Kawano, K., Nagai, A., Kosuge, H., Shibutami, T., Oshima, N., and Funakubo, H., Electrochem. Solid-State Lett., 9, C107 (2006).Google Scholar
12 Kawano, K., Kosuge, H., Oshima, N., and Funakubo, H., Electrochem. Solid-State Lett., 9, C175 (2006).Google Scholar
13 Kim, S. K., Lee, S. Y., Lee, S. W., Hwang, G. W., Hwang, C. S., Lee, J. W., and Jeong, J., J. Electrochem. Soc., 154, D95 (2007).Google Scholar
14 Brekel, C., Brekel, J., and Bloem, J., Philips Res. Rep., 32, 234 (1977).Google Scholar
15 Shibutami, T., Kawano, K., Oshima, N., Yokoyama, S., and Funakubo, H., Mater. Res. Soc. Symp. Proc., 748, U12.7 (2003).Google Scholar