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Light Induced Effects in A-Si:H Films Alloyed with Sulfur

Published online by Cambridge University Press:  15 February 2011

Jong-Hwan Yoon ,
P. C. Taylor ,
Baojie Yan  and
Czang-Ho Lee
Jong-Hwan Yoon
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
Baojie Yan
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
Czang-Ho Lee
Affiliation:
Department of Physics, College of Natural Sciences, Kangwon National University, Chunchon, Kangwon-do 200–701, Korea
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Abstract

Light-induced effects are studied in hydrogenated amorphous silicon-sulfur alloys (a-SiSx:H) and compared to those that exist in a-Si:H. The a-SiSx:H films were grown by decomposition of pre-mixtures of SiH4 and H2 S. The light-induced effects were monitored using electrical (dark conductivity and photoconductivity, including the constant photocurrent method [CPM]) and optical (photoluminescence) measurements and electron spin resonance. It is found that sulfur alloying results in a significant reduction in the degradation in the dark- and photo-conductivity. For ana-SiSx:H film grown with a gas mixture of H2 S/SiH4= 0.02, there is an increase of over an order of magnitude in the dark conductivity and a small decrease in the photoconductivity after 50 hours of light soaking. The subgap deep defect density as measured by CPM increases with illumination time, following a stretched exponential to saturation. The saturated defect density is an order of magnitude higher than that observed in the annealed state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 97
Copyright
Copyright © Materials Research Society 1997

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References

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