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Light Scattering Study of the Evolution of the Surface Morphology During Growth of Ingaas on GaAs

Published online by Cambridge University Press:  15 February 2011

C. Lavoie ,
B. Haveman ,
E. Nodwell ,
T. Pinnington ,
T. Tiedje ,
R. S. Goldman ,
K. L. Kavanagh ,
J. L. Hutter  and
J. Bechhoefer
C. Lavoie
Affiliation:
Department of Physics, University of British Columbia, Vancouver, B. C. V6T-1Z1
B. Haveman
Affiliation:
Department of Physics, University of British Columbia, Vancouver, B. C. V6T-1Z1
E. Nodwell
Affiliation:
Department of Physics, University of British Columbia, Vancouver, B. C. V6T-1Z1
T. Pinnington
Affiliation:
Department of Physics, University of British Columbia, Vancouver, B. C. V6T-1Z1
T. Tiedje
Affiliation:
Department of Electrical Engineering, University of British Columbia, Vancouver, B. C. V6T-1Z1
R. S. Goldman
Affiliation:
Department of Electrical and Computer EngineeringUniversity of California, San Diego, CA 92093-0407
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer EngineeringUniversity of California, San Diego, CA 92093-0407
J. L. Hutter
Affiliation:
Department of PhysicsSimon Fraser University, Burnaby, B. C. V5A-1S6
J. Bechhoefer
Affiliation:
Department of PhysicsSimon Fraser University, Burnaby, B. C. V5A-1S6
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Abstract

In-situ elastic light scattering is used to measure the evolution of the surface morphology of InxGa1−xAs films during molecular beam epitaxy growth on GaAs substrates. The in-situ measurements are compared with ex-situ measurements of the surface morphology on quenched films by optical scatterometry and atomic force microscopy (AFM). The AFM results are in good agreement with the rms roughness obtained from light scattering and both techniques detect the onset of misfit dislocation formation in this system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 193
Copyright
Copyright © Materials Research Society 1995

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