Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-28T14:17:16.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

M. Koike ,
N. Shibata ,
S. Yamasaki ,
S. Nagai ,
S. Asami ,
H. Kato ,
N. Koide ,
H. Amano  and
I. Akasaki
M. Koike
Affiliation:
New Market Technical Devision, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
N. Shibata
Affiliation:
New Market Technical Devision, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
S. Yamasaki
Affiliation:
New Market Technical Devision, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
S. Nagai
Affiliation:
New Market Technical Devision, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
S. Asami
Affiliation:
New Market Technical Devision, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
H. Kato
Affiliation:
New Market Technical Devision, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
N. Koide
Affiliation:
New Market Technical Devision, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
Get access

Abstract

Asymmetric double heterostructures (ADH) of AlGaN/GaInN/GaN blue light emitting diodes (LEDs) and GaInN/GaN multiple quantum well (MQW) LEDs were fabricated by metalorganic vapor phase epitaxy (MOVPE). The ADH LEDs had spectral emissions peaking at 450 nm and the luminous intensify was 2.5 cd at 20 mA The output power was 3.6 mW at 20mA and the external quantum efficiency was as high as 5.1 % at 20 mA. The GaInN/GaN MQW structure was grown successfully by MOVPE. Fine multi-layer structures 7 – 9 nm thick were detected by secondary ion mass spectroscopy and transmission electron microscopy (TEM). The dislocation density in the MQW was as high as 0.5–2×109 cm−2 by TEM The optical efficiency of the MQW layer was higher than that of a bulk GalnN layer. The intensity of UV emission from MQW LEDs was greater than that of blue light from ADH blue LEDs. The UV emission increased as a super-linear function of injection current at -100°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 889
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
2 Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 98, 209(1989).Google Scholar
3 Akasaki, I., Amano, H., Murakami, H., Sassa, M., Kato, H., Manabe, K., J. Cryst. Growth 128, 379(1993).Google Scholar
4 Amano, H., Kito, M, Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
5 Nakamura, S., Iwata, N., Senoh, M, and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
6 Akasaki, I., Amano, H., Itoh, K., Koide, N. and Manabe, K., Inst. Phys. Conf. Ser. 129, 851 (1992).Google Scholar
7 Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett., 64, 1687 (1994).Google Scholar
8 Koike, M., Shibata, N., Kato, H., Yamasaki, S., Koide, N., Amano, H., and Akasaki, I., in “Topical Workshop on III-V Nitrides”, Abstracts: C-2 (1995), to be published in proceedings.Google Scholar
9 A Khan, M., A Skogman, R., Van Hove, J. M., Krishnankutty, S., and Kolbas, R. M., Appl. Phys. Lett. 56, 1257 (1990).Google Scholar
10 Itoh, K., Kawamoto, T., Amano, H., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 30, 1924 (1991).Google Scholar
11 Nakamura, S., Mukai, T., Senoh, M., Nagahama, S., and Iwasa, N., J. Appl. Phys. 74, 3911 (1993).Google Scholar
12 Akasaki, I., Amano, H., and Suemune, I., 6th International Conference on Silicon Carbide and Related Materials-1995 (ICSCRM-95) Sept. 1995.Google Scholar
13 Akasaki, I. and Amano, H., 22th International Symposium on Compound Semiconductors (ISCS-22) Aug. 1995.Google Scholar
14 Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995).Google Scholar