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Light-Emitting Porous Silicon After Standard Microelectronic Processing

Published online by Cambridge University Press:  25 February 2011

C. Peng ,
L. Tsybeskov ,
P.M. Fauchet ,
F. Seiferth ,
S.K. Kurinec ,
J.M. Rehm  and
G.L. Mclendon
C. Peng
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
P.M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
F. Seiferth
Affiliation:
Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623
S.K. Kurinec
Affiliation:
Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623
J.M. Rehm
Affiliation:
Department of Chemistry, University of Rochester, Rochester, NY 14627
G.L. Mclendon
Affiliation:
Department of Chemistry, University of Rochester, Rochester, NY 14627
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Abstract

We have investigated the properties of light-emitting porous silicon (LEpSi) after standard microelectronic processing steps such as annealing, thermal and chemical oxidation, ion implantation, and reactive ion etching. The nature of the physical and chemical changes induced by these processing steps is studied. After thermal or chemical oxidation, the photoluminescence (PL) from LEpSi is blue shifted and more stable. Low dose dopant implantation essentially keeps the PL spectrum unchanged. Thermal annealing after ion implantation affects the PL intensity differently, depending on the type of ions. Reactive ion etching changes the surface morphology and shifts the PL peak to blue.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 179
Copyright
Copyright © Materials Research Society 1993

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References

[1] Koshida, N. and Koyatna, H., Appl. Phys. Lett. 60, 347 (1992)CrossRefGoogle Scholar
[2] Steiner, P., Kozlowski, F., Sandmaier, H. and Lang, W., Mat. Res. Soc. Sytnp. Proc. 283, 343 (1993)CrossRefGoogle Scholar
[3] Zheng, J.P., Jiao, K.L., Shen, W.P., Anderson, W.A. and Kowk, H.S., Appl. Phys. Lett. 61,459 (1992)CrossRefGoogle Scholar
[4] Deal, B.E. and Grove, A.S., J. Appl. Phys. 36, 3770 (1965)CrossRefGoogle Scholar
[5] Gibbots, J.F., Proc. IEEE 56, 295 (1968) and Proc. IEEE 60, 1062 (1970)CrossRefGoogle Scholar
[6] Coburn, J.W., Vacuum 34, 157 (1984)CrossRefGoogle Scholar
[7] Tsybeskov, L., Pentg, C., Duttagupta, S.P., Ettedgui, E., Gao, Y., Fauchet, P.M. and Carver, G.E., “Comparative study of light-etnitting porous silicon anodized with light assistance and in the dark”, 1993 MRS spring meeting, this volumeCrossRefGoogle Scholar
[8] Peng, C., Tsybeskov, L. and Fauchet, P.M., Mat. Res. Soc. Syrup. Proc. 283,121 (1993)CrossRefGoogle Scholar
[9] Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F. and Lehmann, V., Appl. Phys. Lett. 61,943 (1992)CrossRefGoogle Scholar
[10] Koch, F., Petrova-Koch, V., Musehik, T., Nikolov, A. and Gavrilenko, V., Mat. Res. Soc. Symp. Proc. 283,197 (1993)CrossRefGoogle Scholar
[11] Barbour, J.C., Dimos, D., Guilinger, T.R. and Kelly, M.I., Nanotechnology, 3, 202 (1992)CrossRefGoogle Scholar
[12] Vial, J.C., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Romestain, R. and Macfarlane, R.M., Phys. Rev. B 45, 14171 (1992)CrossRefGoogle Scholar
[13] Ettdgui, E., Peng, C., Tsybeskov, L., Gao, Y. and Fauchet, P.M., Carver, G.E., Mizes, H.A., Mat. Res. Soc. Symp. Proc. 283,173 (1993)CrossRefGoogle Scholar