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Light-Soaking of a-Si:H,F Films Deposited from SiF4 and H2

Published online by Cambridge University Press:  25 February 2011

H. R. Park ,
J. Z. Liu ,
A. Maruyama  and
S. Wagner
H. R. Park
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
A. Maruyama
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We light-soaked two a-Si:H, F films up to 1,300 hours at a generation rate of 5×1020 cm−3s− 1. The films differ in fluorine content (1 vs. 5 at.%) and in hydrogen content (8 vs. 15 at.%). At each step, we measured the subgap absorption with the constant photocurrent method, the dark- and the photoconductivity. The magnitude and rate of light-induced defect production is similar to that of a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 613
Copyright
Copyright © Materials Research Society 1989

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References

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