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Limitations to the Bandgap-Selective Photoelectrochemical Etching of GaAs/AlxGa1−x as Heterostructures

Published online by Cambridge University Press:  25 February 2011

Reena Khare ,
D. Bruce Young  and
Evelyn L. Hu
Reena Khare
Affiliation:
University of California, Department of Electrical and Computer Engineering, Santa Barbara, CA 93106
D. Bruce Young
Affiliation:
University of California, Department of Electrical and Computer Engineering, Santa Barbara, CA 93106
Evelyn L. Hu
Affiliation:
University of California, Department of Electrical and Computer Engineering, Santa Barbara, CA 93106
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Abstract

We have used the wet photoelectrochemical (PEC) etch process to demonstrate the selective removal of low aluminum (Al) mole-fraction AlxGa1−xAs layers from those with higher Al mole-fraction. High etch selectivity was found for δx as low as 0.05, but was found to decrease as the incident photon energy approached the energy bandgap of the desired stop-layer. The ultimate selectivity of one layer from an underlying layer was affected not only by differences in material composition, but also by the sequencing of the layers within the structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 757
Copyright
Copyright © Materials Research Society 1993

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