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The limits of patterning in X-ray lithography

Published online by Cambridge University Press:  15 February 2011

F. Cerrina
F. Cerrina*
Affiliation:
Electrical and Computer Engineering University of Wisconsin - Madison
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Abstract

We show how the imaging process in proximity X-ray lithography is capable of reaching the sub-100 nm range. However, The use of proximity X-ray lithography is dependent on the mask to form the correct image of the pattern. The joint development of electron beam lithography patterning tools with high-placement accuracy, of a better understanding of the mask mechanical response and of new aligners, clearly indicates that the goal of using X-ray lithography for nanolithography applications is reachable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 173
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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