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Line-Source Processing of SOI Structures with Laser and Electron Beam

Published online by Cambridge University Press:  21 February 2011

Leslie J. Palkuti  and
Chan-Sui pang
Leslie J. Palkuti
Affiliation:
Advanced Research and Applications Corp., 1223 E. Arques Ave., Sunnyvale, CA
Chan-Sui pang
Affiliation:
Advanced Research and Applications Corp., 1223 E. Arques Ave., Sunnyvale, CA
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Abstract

Line-shaped laser and electron beams in combination with halogen-lamp substrate heating were used to fabricate single-crystal SOI films. Electron-beam and laser systems were developed to achieve a minimum beam cross section of 10–100 microns and aspect ratios up to 70. Unseeded SOI films were fabricated with a (100) textured single-crystal structure. Seeded films were recrystallized with 20 × 80-micron single crystal islands with no low-angle grain boundaries. A process window of 1 to 10 percent in electron-beam power was measured. Single-crystal films were obtained at a line-scan velocity up to 2 cm/s suggesting a potential throughput of about 100 wafers per hour. The high scan velocity allows for minimizing the high-temperature cycle to under 30 seconds that the wafer is exposed to during recrystallization. This short temperture cycle is compatible with the fabrication of three dimensional devices, since unwanted diffusion and substrate damage are minimized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 93
Copyright
Copyright © Materials Research Society 1984

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References

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