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Liquid Phase Epitaxial Growth of Semi-Insulating Aigalnas by Fe Doping

Published online by Cambridge University Press:  26 February 2011

T. Tanahashi ,
S. Okuda ,
M. Kondo ,
M. Sugawara ,
S. Isozumi  and
K. Nakajima
T. Tanahashi
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
S. Okuda
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
M. Kondo
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
M. Sugawara
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
S. Isozumi
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
K. Nakajima
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
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Abstract

Fe-doped semi-insulating AlGalnAs grown by liquid phase epitaxy has been studied and compared to Fe-doped GalnAsP. It has been found that semiinsulating AlGalnAs is easier to obtain than semi-insulating GalnAsP, because of its high iron distribution coeficient. The high resistivity of 1×109 ohm-cm has been obtained for Al0.481n0.52 As grown at 750°C. The activation energy of the Fe acceptor level in the AlGalnAs system has also been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 533
Copyright
Copyright © Materials Research Society 1988

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References

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