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Liquid Phase Recrystallization of InSb by CW Laser Irradiation

Published online by Cambridge University Press:  15 February 2011

D.H. Lee ,
G.L. Olson  and
L.D. Hess
D.H. Lee
Affiliation:
Santa Barbara Research Center, Goleta, CA, 93017
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA, 90265
L.D. Hess
Affiliation:
Hughes Research Laboratories, Malibu, CA, 90265
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Abstract

Indium antimonide can be recrystallized epitaxially in the liquid phase by a scanning cw argon ion laser beam for improvements in crystal quality, surface morphology and oxide interface properties. Selected area diffraction measurements, Auger sputter depth profiling and dispersive x-ray analysis indicate that crystallization occurs epitaxially, and stoichiometry is preserved in the laser processed regions. Complete elimination of all asperities present in the original polished surface was observed subsequent to laser irradiation. Scanning electron microscopy and mechanical stylus measurements of the lateral profile of the laser irradiated region revealed the presence of a slight surface contour (convex meniscus) with a maximum change in height of 700 Å across a 64 μm recrystallized strip. In contrast to previous work with other compound semiconductors (e.g., GaAs), these results with InSb indicate that cw laser-induced melting and subsequent liquid phase epitaxial recrystallization can be used to provide improved materials properties of particular compound semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 281
Copyright
Copyright © Materials Research Society 1981

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References

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