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Local Doping of GaAs by Laser-Stimulated Diffusion From the Gas Phase

Published online by Cambridge University Press:  21 February 2011

H. KrÄutle ,
W. Roth ,
A. Krings  and
H. Beneking
H. KrÄutle
Affiliation:
Institute of Semiconductor Electronics, Technical University Aachen, Sommerfeldstrabe, 5100 Aachen / Frg
W. Roth
Affiliation:
Institute of Semiconductor Electronics, Technical University Aachen, Sommerfeldstrabe, 5100 Aachen / Frg
A. Krings
Affiliation:
Institute of Semiconductor Electronics, Technical University Aachen, Sommerfeldstrabe, 5100 Aachen / Frg
H. Beneking
Affiliation:
Institute of Semiconductor Electronics, Technical University Aachen, Sommerfeldstrabe, 5100 Aachen / Frg
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Abstract

Semi-insulating GaAs as well as MOCVD GaAs layers have been doped in situ with Se in a MOCVD system. H2Se diluted in an H2 + AsH3 atmosphere, which avoids surface decomposition, is used as the doping source. The surface is heated locally for less than 1 μs with a 3-ns Nd-YAG-laser pulse (frequency doubled: λ = 532 nm, pulse ratio 5 s−1). During this short time adsorbed Se atoms are incorporated into the heated surface region.

This process allows us to achieve heavily doped thin layers with Se concentrations in the order of 1021 cm−3. Outside the irradiated area the crystal remains undoped.

Se concentrations measured with secondary ion mass spectroscopy (SIMS) and carrier concentrations measured with the van der Pauw method indicate the diffusion of adsorbed Se atoms into GaAs. The distribution and activation of Se depends on laser power and substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 353
Copyright
Copyright © Materials Research Society 1984

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References

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