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Local Equilibrium Phase Diagrams for SiC Deposition in a Hot Wall LPCVD Reactor

Published online by Cambridge University Press:  15 February 2011

Chien C. Chiui ,
Seshu B. Desu ,
Zhi J. Chen  and
Ching Yi Tsai
Chien C. Chiui
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061-0237
Seshu B. Desu
Affiliation:
Author to whom correspondence should be addressed
Zhi J. Chen
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061-0237
Ching Yi Tsai
Affiliation:
Department of Engineering Science and Mechanics, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061-0237
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Abstract

The traditional CVD phase diagrams are only valid for cold wall reactors because of the neglecting of the depletion effects in hot wall reactors. Due to the depletion effects along the reactor, the traditional CVD phase diagrams can not accurately predict the phases deposited on the substrate in a hot wall CVD system. In this paper, a new approach to calculate the local equilibrium CVD phase diagrams in a hot wall reactor is presented by combining the depletion effects with the equilibrium thermodynamic computer codes (SOLGASMIX–PV). In this study, the deposition of SiC using methyltrichlorosilane (MTS)–hydrogen (H2) was chosen to verify this new approach. The differences between the new CVD phase diagrams and the traditional phase diagrams were discussed. The calculated CVD phase diagrams were also compared with the experimental data. The single phase of SiC predicted by this approach is much better than the traditional phase diagrams. The experimental regions for depositing single phase SiC are larger than the calculated local phase diagrams because of the higher linear velocity of the gas flux under low pressure and the polarity of the Si carrying intermediate species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 233
Copyright
Copyright © Materials Research Society 1994

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References

1. Langlais, F., Hottier, F., and Cadoret, R., J. Cryst. Growth, 56, 659 (1982).Google Scholar
2. Fischman, G.S. and Petuskey, W.T., J. Am. Ceram. Soc., 68, 185 (1985).CrossRefGoogle Scholar
3. Kingon, A.I., Lutz, L.J., Liaw, P., and Davis, R.F., J. Am. Ceram. Soc., 66, 558 (1983).Google Scholar
4. Minato, K. and Fukuda, K., J. Nuclear Mater., 149, 233 (1987).Google Scholar
5. Gokoglu, S.A., in Chemical Vapor Deposition of Refractory Metal and Ceramics II, edited by Besmann, T.M., Gallois, B.M., and Warren, J.W. (Mater. Res. Soc. Symp. Proc. 250, Mater. Res. Soc., Pittsburgh, PA, 1992), p. 18.Google Scholar
6. Langlais, F., Prebenge, C., Tarride, B., and Naslain, R., de Physique, J., Colloque c5, supplément au n” 5, Tome 50, C5-93 ∼ C5-103 (1989).Google Scholar
7. Neuschiitz, D. and Salehomoum, F., in Chemical Vapor Deposition of Refractory Metal and Ceramics II, edited by Besmann, T.M., Gallois, B.M., and Warren, J.W. (Mater. Res. Soc. Symp. Proc. 250, Mater. Res. Soc., Pittsburgh, PA, (1992), p. 41.Google Scholar
8. Langlais, F. and Prebende, C., in Proc. 11th Int. Conf. on CVD, edited by Spear, K.E. and Cullen, G.W. (The Electrochem. Soc., Pennington, NJ, 1990), p. 686.Google Scholar
9. Gokoglo, S.A. and Kuczmarski, M.A., in Proc. of the 12th Int. Symp. on Chemical Vapor Deposition 1993, edited by Jeusen, K.F. and Cullen, G.W. (The Electrochem. Soc., Inc., Pennington, NJ, Proc. vol.93-2), p. 392 Google Scholar
10. Tsai, C.Y., Desu, S.B., and Chiu, C.C., J. Mater. Res, 9, (1994) (in press).Google Scholar
11. Chiu, C.C., Desu, S.B., and Tsai, C.Y., J. Mater. Res, 8, 2617 (1993).CrossRefGoogle Scholar
12. Sheldon, B.W., in Solgasmix-PV for the PC, ORNL, Oct., 1989.Google Scholar
13. Eriksson, G., Acta Chem. Scand., 25, 2651 (1971).Google Scholar
14. White, W.B., Johnson, W.M., and Dantzig, G.B., J. Chem. Phys., 28, 751 (1958).Google Scholar
15. Besmann, T.M., Sheldon, B.W., Moss, T.S. III, and Kaster, M.D., J. Am. Ceram. Soc., 75, 2899 (1992).Google Scholar
16. Besmann, T.M. and Johnson, M.L., in Proc. 3rd Int. Symp. on Ceramic Materials and Components for Engine, Las Vegas, NV, 443-456 (1988).Google Scholar
17. Burgess, J.N. and Lewis, T., Chem. and Industry, 19, 76 (1974).Google Scholar
18. JANAF Thermochemical Tables, 3rd Edition, J. Phys. Chem. Reference Data Vol 14, (1985).Google Scholar
19. Chen, Z.J. and Desu, S.B., unpublished paper.Google Scholar
20. Chiu, C.C. and Desu, S.B., J. Mater. Res., 8, 535 (1993).Google Scholar
21. Chiu, C.C., Desu, S.B., Chen, G., Tsai, C.Y., and Reynolds, W.T. Jr., submitted to J. Mater. Res.Google Scholar
22. Besmann, T.M., Sheldon, B.W., and Kaster, M.P., Surface and Coating Technol., 43/44, 167 (1990).CrossRefGoogle Scholar
23. Schintlmeister, W., Wallgram, W., and Gigl, K., High Temp.-High Pressures, 18, 211 (1986).Google Scholar
24. Kuo, D.H., Cheng, D.J., Shyy, W.J., and Hon, M.H., J. Electrochem. Soc., 137[11], 3688 (1990).Google Scholar
25. Motojima, S. and Hasegawa, M., J. Vac. Sci. Technol., A8, 3763 (1990).Google Scholar