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Localisation of Carriers in Porous Silicon

Published online by Cambridge University Press:  15 February 2011

I. Mihalcescu ,
J. C. Vial  and
R. Romestain
I. Mihalcescu
Affiliation:
Laboratoire de Spectrométrie Physique, Université Joseph Fourier and CNRS Boîte Postale 53 X, 38041 Grenoble cedex, France. jcvial@grenet.fr.
J. C. Vial
Affiliation:
Laboratoire de Spectrométrie Physique, Université Joseph Fourier and CNRS Boîte Postale 53 X, 38041 Grenoble cedex, France. jcvial@grenet.fr.
R. Romestain
Affiliation:
Laboratoire de Spectrométrie Physique, Université Joseph Fourier and CNRS Boîte Postale 53 X, 38041 Grenoble cedex, France. jcvial@grenet.fr.
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Abstract

We analyze the intensity and decay time evolution of the porous silicon luminescence upon anodic oxidation, aging, chemiral thinning and temperature variation. Strong analogies are pointed out for the photoluminescence intensity as well as for the photoluminescence decay shape evolution. They are interpreted by the variation of the extension of the carrier wavefunction induced by the modification of potential barrier efficiencies. No additional assumption such as hopping of carriers was necessary to explain the decay shapes well fitted by stretched exponential. On the contrary our observations and our simple model are in favor of a strong localization of carriers. Some experimental results are revisited within the frame of this model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 499
Copyright
Copyright © Materials Research Society 1997

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References

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