Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-28T18:37:24.789Z Has data issue: false hasContentIssue false
  • English
  • Français

Localisation of Excitation in InGaN Epilayers and Quantum wells

Published online by Cambridge University Press:  01 February 2011

Kevin Peter O'Donnell
Kevin Peter O'Donnell*
Affiliation:
k.p.odonnell@strath.ac.uk, Strathclyde University, Physics, John Anderson Building, 107 Rottenrow East, Glasgow, G4 0NG, United Kingdom
Get access

Abstract

Using a synchrotron radiation source, extended X-Ray Absorption Fine Structure (EXAFS) measurements were performed at the gallium and indium K-edges of a range of (In,Ga)N samples, grown either by MBE or MOCVD. The resulting determinations of local alloy structure, complemented in selected cases by asymmetric x-ray diffraction reciprocal space mapping (XRD-RSM), show an inequality in the “mixed cation” separations, Ga-In and In-Ga, for samples with InN content less than about 50%. This asymmetry, which increases with decreasing InN content of the layers, is related to the high luminescence efficiency of the materials through a combination of percolation and localisation of excitation on the GaN and InN sub-lattices, respectively.

Keywords

nitrideluminescencealloy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I12-07
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] For reviews of early work on InGaN, see Low-dimensional Nitride Semiconductors, 1st ed. Gil, B. (Editor), (Oxford University Press, Oxford, 2002)Google Scholar
[2] Davydov, V.Yu., Klochikhin, A.A., Emtsev, V.V., et al., Phys. Stat. Sol. (b) 234 787 (2002)Google Scholar
[3] Gurman, S.J., J. Synchrotron Radiat. 2 56 (1995)Google Scholar
[4] O'Donnell, K.P., Mosselmans, J.F.W., Martin, R.W., et al., J. Phys. C 13 6977 (2001)Google Scholar
[5] Note added in proof: an extended description of this work is available: as Kachkanov, V., O'Donnell, K.P.. Pereira, S. and Martin, R.W., Philosophical Magazine, 87 (2007) 1999–2017 Google Scholar