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Localization and Electron-Electron Interaction Effects in Platinum Silicide Thin Wires
Published online by Cambridge University Press: 25 February 2011
Abstract
The low-temperature magnetoresistance of PtSi thin wires of varying width, prepared with different mask elements (Cu and Ni) in the reactive ion beam etching, has been studied, to determine the width dependence of the physical parameters in the weak localization. A drastic decrease of the magnetic impurity scattering time τs and that of the superconducting transition temperature Tc have been found for the wires prepared by Ni mask with narrowing width, which suggests that the phase coherence of diffusing electrons responsible for the weak localization and the superconductivity are strongly affected by the presence of a small amount of Ni impurities recoil implanted into the surface region of the sidewalls of wires.
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