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Localized Charging Effects Resulting From Focused Ion Beam Processing Of Non-Conductive Materials

Published online by Cambridge University Press:  01 February 2011

Marion. A. Stevens-Kalceff ,
S. Rubanov  and
P. R. Munroe
Marion. A. Stevens-Kalceff
Affiliation:
School of Physics, University of New South Wales, Sydney, 2052, NSW, Australia.
S. Rubanov
Affiliation:
School of Physics, University of New South Wales, Sydney, 2052, NSW, Australia.
P. R. Munroe
Affiliation:
School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia.
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Abstract

Focused Ion Beam (FIB) systems employ a finely focussed beam of positively charged ions to process materials. Ion induced charging effects in non-conductive materials have been confirmed using Scanning Surface Potential Microscopy (SSPM). Significant localized residual charging is observed within the ion implanted micro-volumes of non-conductive materials both prior to and following the onset of sputtering. Characteristic observed surface potentials associated with the resultant charging have been modelled, giving insight into the charging processes during implantation and sputtering. The results of this work have implications for the processing and microanalysis of non-conductive materials in FIB systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R10.11
Copyright
Copyright © Materials Research Society 2004

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References

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