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Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response Via Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

D.K. Sengupta ,
W. Fang ,
J.I. Malin ,
H.C. Kuo ,
T. Horton ,
A. Curtis ,
N.F. Gardner ,
B. Flachsbart ,
W. Wohlmuth  and
D. Turnbull
...Show all authors
D.K. Sengupta
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
W. Fang
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
J.I. Malin
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
H.C. Kuo
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
T. Horton
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
A. Curtis
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
N.F. Gardner
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
B. Flachsbart
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
W. Wohlmuth
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
D. Turnbull
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
S.L. Chuang
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
K. C. Hsieh
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
K.Y. Cheng
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
I. Adesida
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
M. Feng
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
S.G. Bishop
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
G. E. Stillman
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
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Abstract

A shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AIGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 355
Copyright
Copyright © Materials Research Society 1996

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References

1. West, L. C. and Eglash, S. J., Appl. Phys. Lett. 46, 1156 (1985).Google Scholar
2. Levine, B. F., Zussman, A., Gunapala, S. D., Asom, M. T., Kuo, J. M., and Hobson, W. S., J. Appl. Phys. 72, 4429 (1992).Google Scholar
3. Anderson, J. Y. and Lundqvist, L., Appl. Phys. Lett. 59, 857 (1991).Google Scholar
4. Janousek, B. K., Daugherty, M. J., Bloss, M. L., Rosenbluth, M. L., O'Loughlin, M. J., Kanter, H., Deluccia, F. J., and Perry, L. E., J. Appl. Phys. 67, 7608 (1990).Google Scholar
5. Grave, I., Shakouri, A., Kuze, N. and Yariv, A., Appl. Phys. Lett. 60, 2362 (1992).Google Scholar
6. Martinet, E., Luc, F., Rosencher, E., Bois, Ph. and Delaitre, S., Appl. Phys. Lett. 60, 895 (1992).Google Scholar
7. Ralston, J. D., Gallagher, D. F. G., Bittner, P., Fleissner, J., Dischler, B. and Koidl, P., J. Appl. Phys. 71, 3562 (1992).Google Scholar
8. Ahn, D. and Chuang, S. L., IEEE. J. Quantum Electron. QE-23, 2196 (1987).Google Scholar
9. Bethea, C. G., Levine, B. F., Shea, V. O., Abbott, R. R. and Hsieh, S. J., IEEE. Trans. Electron Devices 38, 1118 (1991).Google Scholar
10. Kozlowski, L. J., Williams, G. M., Sullivan, G. J., Farley, C. W., Aderson, R. J., Chen, J., Cheung, D. T., Tennant, W. E. and DeWames, R. E., IEEE Trans. Electron Devices 38, 1124 (1991).Google Scholar
11. Major, J. S., Kish, F. A., Richard, T. A., Sugg, A. R., Baker, J. E. and Holonyak, N. Jr., J. Appl. Phys. 68, 6199 (1990).Google Scholar
12. Ralston, J. D., Ramsreiner, M., Dischler, B., Koidl, P., Maier, M., Brandt, G., Koidl, P. and As, D. J., J. Appl. Phys. 71, 3562 (1992).Google Scholar
13. Sengupta, D.K., Fang, W., Malin, J.I., Curtis, A., Horton, T., Kuo, H.C., Turnbull, D., Lin, C. H., Hsieh, K.C., Chuang, S.L., Feng, M., Bishop, S. G., and Stillman, G.E., Submitted to J. Elect. Mat.Google Scholar
14. Choi, K. K., Levine, B. F., Bethea, C. G., Walker, J. and Malik, R. J., Appl. Phys. Lett. 50, 1814 (1987).Google Scholar
15. Pelve, E., Beltram, F., Bethea, C. G., Levine, B. F., Shen, V. O., Hsieh, S. J. and Abbott, R. R., J. Appl. Phys. 66, 5656 (1989).Google Scholar
16. Levine, B. F., Bethea, C. G., Hasnain, G., Shen, V. O., Pelve, E., Abbott, R. R. and Hsieh, S. J., Appl. Phys. Lett. 56, 851 (1990).Google Scholar
17. Choi, K. K., Levine, B. F., Malik, R. J., Walker, J. and Bethea, C. G., Phys. Rev, B 35, 4172 (1987).Google Scholar
18. Brennan, K. and Wang, Y.,. Phys. Lett. 57, 1337 (1990).Google Scholar
19. Williams, G. M., deWames, R. E., Farley, C. W. and Anderson, R. J., Appl. Phys. Lett. 60, 1324 (1992).Google Scholar
20. Bethea, C. G., Levine, B.F., Shen, V.O., Abbott, R.R., and Hseih, S.J., IEEE. Trans. Electron. Devices 38, 1118 (1991).Google Scholar