Hostname: page-component-6bf8c574d5-k2jvg Total loading time: 0 Render date: 2025-03-07T02:14:10.975Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Dielectric Constant Materials Integration Challenges

Published online by Cambridge University Press:  10 February 2011

Gary W. Ray
Gary W. Ray*
Affiliation:
ULSI Research Laboratory, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
Get access

Abstract

Considerable effort has been expended in recent years in the development, evaluation, and integration of new low Kc dielectric materials for IC applications. Many film properties must be measured before a film can be selected for integration into an interconnect process flow. Among them are glass transition temperature, thermal stability, Young's modulus, adhesion, stress, coefficient of thermal expansion, dielectric constant, breakdown voltage, solvent resistance, dry etch characteristics, and gap fill performance. These properties must in turn be considered when developing interconnect process modules and selecting the associated equipment set. The properties of these materials differ from those of the commonly used (PE)CVD silicon dioxides to varying extents, depending upon the nature of their composition and structure. This has often resulted in substantial modifications to the modules that comprise interconnect process flows, sometimes compromising manufacturability. This paper will address some of the issues associated with the integration of low K materials into interconnect process flows and how they are related to the properties of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 199
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bohr, Mark T. in Advanced Metallization and Interconnect Systems for ULSI in 1996, edited by Havemann, R., Schmitz, J., Komiyama, H., and Tsubouchi, K. (Mater. Res. Soc., Conference Proceedings ULSI XII 1997, Pittsburgh, PA), pp. 3–10.Google Scholar
2. Nakagawa, O. S., Rahmat, K., Oh, S.-Y., Ray, G., Kumar, R. in Advanced Metallization and Interconnect Systems for ULSI in 1995, edited by Ellwanger, R. C. and Wang, S.-Q. (Mater. Res. Soc., Conference Proceedings ULSI XI 1996, Pittsburgh, PA), pp. 129–135.Google Scholar
3. Pai, P.L and Ting, C. H., in Proceedings of the Sixth International VLSI Multilevel Interconnection Conference, Santa Clara, CA, pp. 258–264, 1989.Google Scholar
4. SEMATECH Low Dielectric Constant Materials Database Project J105.Google Scholar
5. Jeng, S.-P., Taylor, K., Lee, C., Ting, L., Chang, M.-C., Seha, T., Eissa, M., Nguyen, H., Jin, C., Lane, A., McAnally, P., Havemann, R. and Luttmer, J. D., in Advanced Metallization and Interconnect Systems for ULSI in 1995, edited by Ellwanger, R. C. and Wang, S.-Q. (Mater. Res. Soc., Conference Proceedings ULSI XI 1996, Pittsburgh, PA), pp. 15–21.Google Scholar
6. Internal result.Google Scholar
7. Chiang, C., Lam, N. V., Chu, J. K., Cox, N., Fraser, D., Bozarth, J. and Mumford, B. in Proceedings of the Fourth International VLSI Multilevel Interconnection Conference, Santa Clara, CA, pp. 404–412, 1987.Google Scholar
8. Kumar, A., Bakhru, H., in Abstracts of the MRS Spring Meeting, p. 103, San Francisco, CA, April 13–17, 1998.Google Scholar
9. Ray, G. W., Peng, S., Burriesci, D., O’Toole, M. M. and Liu, E.-D., J. ECS 129 (9), pp. 2152– 2154 (1982).Google Scholar
10. Moran, J. M. and Maydan, D. M., J. Vac. Sci. Technol. 16, 1979.Google Scholar
11. SEMATECH Low Dielectric Constant Materials Database Project JI105.Google Scholar
12. Homma, Y., Furusawa, T., Kusukawa, K., Nagasawa, M., Nakamura, Y., Saitou, M., Morishima, H. and Sato, H. in Proceedings of the Twelfth International VLSI Multilevel Interconnection Conference, Santa Clara, CA, pp. 457–463, 1995.Google Scholar
13. Murarka, S. P., in Abstracts of the MRS Spring Meeting, p. 103, San Francisco, CA, April 13–17, 1998.Google Scholar
14. Endo, K., MRS Bulletin 22 (10), pp. 55–58, (1997).Google Scholar
15. Theil, J. A., Kooi, G., Mertz, R., Ray, G. and Seaward, K., in Proceedings of the International Interconnect Technology Conference, San Francisco, CA, pp. 128–130, 1998.Google Scholar
16. McClatchie, S., Beekmann, K., Kiermasz, A., Dobson, C., in Proceedings of the Third International Dielectrics for ULSI Multilevel Interconnection Conference, pp. 34–40, Santa Clara, CA, 1997.Google Scholar
17. Hacker, N. P., MRS Bulletin 22 (10), pp. 33–38, (1997).Google Scholar
18. Jin, C., Luttmer, J. D., Smith, D. M. and Ramos, T. A., MRS Bulletin 22 (10), pp. 39–42, (1997).Google Scholar