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Low Frequency Noise Behavior in a-Si:H Schottky Barrier Devices

Published online by Cambridge University Press:  10 February 2011

K. Aflatooni ,
A. Nathan  and
R. Hornsey
K. Aflatooni
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, kaflatoo@venus.uwaterloo.ca
A. Nathan
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, kaflatoo@venus.uwaterloo.ca
R. Hornsey
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, kaflatoo@venus.uwaterloo.ca
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Abstract

We present a systematic experimental study of low frequency noise behavior in Mo/a-Si:H Schottky diodes under reverse bias operation. The noise in the Schottky diode was found to increase with increasing reverse current and with an approximate 1/f behavior at low bias voltages, yielding a Hooge parameter in the range (2 to 3) × 10−4. At high reverse voltages, due to electrical stressing and hence, bias-induced material instability, a significant deviation from the 1/f behavior was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 747
Copyright
Copyright © Materials Research Society 1996

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References

[1] Rubinelli, F. A., Hou, J. Y., and Fonash, S. J., J. Appl. Phys. 73, 2458 (1993).Google Scholar
[2] Fang, Y. K., Hwang, S. B., Chen, K. H., Liu, C. R., and Kuo, L. C., IEEE Trans. Electron Devices 42, 1425 (1995).Google Scholar
[3] Takayanagi, I., Nagai, K., Tetsuka, H., Inoue, Y., Araki, S., Mochimaru, S., Iketaki, Y., Horikawa, Y., and Matsumoto, K., IEEE Trans. Electron Devices 39,1350 (1992).Google Scholar
[4] Boudry, J. M. and Antonuk, L. E., Proc. MRS Symp., Eds., Schiff, E. A., Thompson, M. J., Madan, A., Tanaka, K., LeComber, P. G., vol.297 (1993) 975.Google Scholar
[5] Miri, A. M. and Chamberlain, S. G., Proc. MRS Symp. (1995) 737.Google Scholar
[6] Miri, A. M., Development of a Novel Wet Etch Fabrication Technology for Amorphous Silicon ThinFilm Transistors, Ph.D. Dissertation, University of Waterloo, Ontario, Canada, 1996.Google Scholar
[7] Nieuwesteeg, K. J. B. M., Veen, M. van der, and Vink, T. J., J. Appl. Phys. 74, 2572 (1993).Google Scholar
[8] Nieuwesteeg, K. J. B. M., Veen, M. van der, Vink, T. J., and Shannon, J. M., J. Appl. Phys. 74, 2581 (1993).Google Scholar
[9] Hooge, F. N., Phys. Lett. 29A (1969) 139.Google Scholar
[10] Hooge, F. N., Physica 60 (1972) 130.Google Scholar
[11] Street, R. A., Hydrogenated Amorphous Silicon, (Cambrodge University Press, Cambridge, England, 1991).Google Scholar