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Low Temperature (300°C) Formation of Thermodynamically Stable NiSi2 Contacts to SiC

Published online by Cambridge University Press:  21 March 2011

C. Deeb ,
H. Kahn ,
X. Milhet ,
C. Zorman ,
M. Mehregany  and
A. H. Heuer
C. Deeb
Affiliation:
Dept. of Materials Science and Eng., Case Western Reserve University, Cleveland, Ohio 44106
H. Kahn
Affiliation:
Dept. of Materials Science and Eng., Case Western Reserve University, Cleveland, Ohio 44106
X. Milhet
Affiliation:
Dept. of Materials Science and Eng., Case Western Reserve University, Cleveland, Ohio 44106
C. Zorman
Affiliation:
Dept. of Electrical Engineering and Applied Phys., Case Western Reserve University, Cleveland, Ohio 44106
M. Mehregany
Affiliation:
Dept. of Electrical Engineering and Applied Phys., Case Western Reserve University, Cleveland, Ohio 44106
A. H. Heuer
Affiliation:
Dept. of Materials Science and Eng., Case Western Reserve University, Cleveland, Ohio 44106
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Abstract

Thermodynamically stable, low specific contact resistance electrical contacts to SiC are essential to the application of such devices in high power or high temperature applications. However, thermal budgets impose processing constraints due to interfacial reactions and dopant profiles during device fabrication. Nickel disilicide (NiSi2) is useful for metallization of SiC, as stable contacts can be formed on SiC by reacting a fugitive layer of amorphous silicon (a-Si) with sputtered nickel at 300°C. NiSi2 forms directly upon reacting nickel with a-Si; this is not the case when nickel is reacted with crystalline silicon, where more nickel-rich silicides form first. Specific contact resistances as low as 5.6×10−5 Ωcm2 have been measured using NiSi2 circular TLM contacts so formed on APCVD 3C-SiC thin films deposited on a silicon wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.22
Copyright
Copyright © Materials Research Society 2001

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References

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