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Low Temperature Annealing of LPCVD Silicon Films

Published online by Cambridge University Press:  22 February 2011

T. Aoyama ,
N. Konishi ,
T. Suzuki  and
K. Miyata
T. Aoyama
Affiliation:
Hitachi Research Laboratory, 4026 Kuji-cho, Hitachi, Ibaraki 319–2 Japan
N. Konishi
Affiliation:
Hitachi Research Laboratory, 4026 Kuji-cho, Hitachi, Ibaraki 319–2 Japan
T. Suzuki
Affiliation:
Hitachi Research Laboratory, 4026 Kuji-cho, Hitachi, Ibaraki 319–2 Japan
K. Miyata
Affiliation:
Hitachi Research Laboratory, 4026 Kuji-cho, Hitachi, Ibaraki 319–2 Japan
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Abstract

Low temperature, 600°C annealing of LPCVD films was investigated by x-ray diffraction, ESR, TEM, and carrier mobility measurements. An optimum deposition temperature of about 550°C was found to yield good crystallinity and large electron mobility for annealed films; large grain sizes, a maximum crystallite size, and a maximum electron spin density were also observed for films deposited at the optimum temperature. Electron spin density for as-deposited films correlated with the crystalline volume by x-ray diffraction measurements on the films after annealing. This implys that only those amorphous components with high electron spin density can be converted into the crystalline phase by 600°C annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 347
Copyright
Copyright © Materials Research Society 1988

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References

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