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Low Temperature MOCVD of Oriented PbTiO3 Films on Si(100)

Published online by Cambridge University Press:  15 February 2011

H. Chen ,
B.M. Yen ,
G.R. Bai ,
D. Liu  and
H.L.M. Chang
H. Chen
Affiliation:
Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
B.M. Yen
Affiliation:
Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
G.R. Bai
Affiliation:
Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
D. Liu
Affiliation:
Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
H.L.M. Chang
Affiliation:
Material Science Division, Argonne National Laboratory, Argonne, IL 60439 USA
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Abstract

Highly oriented PbTiO3 (PT) thin films have been successfully grown on Si(100) using MOCVD technique at as low as 450°C. Titanium isopropoxide, Ti(C3H7O)4, tetraethyl lead, Pb(C2H5 )4, and pure oxygen were chosen as precursor materials in this work. The resulting film chemistry and texture were found to be strongly dependent on Pb/Ti source flow ratio and growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 35
Copyright
Copyright © Materials Research Society 1994

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