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Low Temperature Process Technologies for the Next Generation High Performance Polycrystalline Silicon Thin-Film Transistors

Published online by Cambridge University Press:  17 March 2011

Seiichiro Higashi ,
Daisuke Abe ,
Satoshi Inoue  and
Tatsuya Shimoda
Seiichiro Higashi
Affiliation:
Base Technology Research Center, Seiko Epson Corp. Nagano, 392-8502, JAPAN
Daisuke Abe
Affiliation:
Base Technology Research Center, Seiko Epson Corp. Nagano, 392-8502, JAPAN
Satoshi Inoue
Affiliation:
Base Technology Research Center, Seiko Epson Corp. Nagano, 392-8502, JAPAN
Tatsuya Shimoda
Affiliation:
Base Technology Research Center, Seiko Epson Corp. Nagano, 392-8502, JAPAN
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Abstract

Low temperature process technologies for high performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) are discussed based on the investigations of pulsed laser crystallization, plasma treatment of poly-Si films, and SiO2/Si interface formation. Although highdensity (∼1018 cm−3) trap states localized at grain boundaries are introduced to the poly-Si films by laser crystallization, they are efficiently decreased to the order of 1016 cm−3 by following hydrogen plasma treatment. It is also shown that high quality SiO2/Si interfaces with the density of interface trap states (Dit) in the order of 1010 cm−2eV−1 are achieved using electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD). By applying these low temperature process technologies to the fabrication process, high performance poly-Si TFTs with high n-channel mobility μn) of 187 cm2V−1s−1, low threshold voltage (Vth) of 1.97 V and small subthreshold swing (S) of 210 mV/dec. were obtained. These results indicate that the development of low temperature process technologies that can control trap states is the key to the next generation high performance poly-Si TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D12.6.1
Copyright
Copyright © Materials Research Society 2001

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