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Low Temperature Selective Area Chemical Vapor Deposition of Gold Films: Growth and Characterization

Published online by Cambridge University Press:  22 February 2011

Paul F. Seidler ,
Steven P. Kowalczyk ,
Mark M. Banaszak Holl ,
John J. Yurkas ,
Maurice H. Norcott  and
F. Read
Paul F. Seidler
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
Steven P. Kowalczyk
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
Mark M. Banaszak Holl
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
John J. Yurkas
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
Maurice H. Norcott
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
F. Read
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
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Abstract

Substrate-selective, low-temperature chemical vapor deposition of high quality gold filmswas obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1 ± 0.4 kcal mol−1 and 18.3 ± 0.7 kcal mol−1 were found for growth of gold films on gold and copper substrates, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 359
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Baum, T. H., Jones, C. R., Appl. Phys. Lett. 47, 538 (1985); J. Vac. Sci. Tech. B 4, 1187.Google Scholar
2. Tao, T., Wilkinson, W., Melngailis, J., J. Vac. Sci. Tech. B 9, 162 (1992).Google Scholar
3. Banaszak Holl, M. M., Seidler, P. F., Kowalczyk, S. P., McFeely, F. R., submitted for publication.Google Scholar
4. Seidler, P. F., Banaszak Holl, M. M., McFeely, F. R., Kowalczyk, S. P., patent pending.Google Scholar
5. Madakson, P., Liu, J. C., J. Appl. Phys. 68, 2121, (1990).Google Scholar
6. Braicovich, L., Garner, C. M., Skeath, P. R., Su, C. Y., Chye, P. W., Lindau, I., and Spicer, W. E., Phys. Rev. B 20, 5131, (1979).Google Scholar