Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-15T08:30:27.134Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Zinc Indium Oxide Backplane Development for Flexible OLED Displays in a Manufacturing Pilot Line Environment

Published online by Cambridge University Press:  15 July 2011

Michael A. Marrs ,
Sameer M. Venugopal ,
Curtis D. Moyer ,
Edward J. Bawolek ,
Dirk Bottesch ,
Barry P. O’Brien ,
Rita J. Cordova ,
Jovan Trujillo ,
Cynthia S. Bell  and
Douglas E. Loy
...Show all authors
Michael A. Marrs
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Sameer M. Venugopal
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Curtis D. Moyer
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Edward J. Bawolek
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Dirk Bottesch
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Barry P. O’Brien
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Rita J. Cordova
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Jovan Trujillo
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Cynthia S. Bell
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Douglas E. Loy
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Gregory B. Raupp
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
David R. Allee
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Get access

Abstract

A low temperature amorphous zinc indium oxide (ZIO) thin film transistor (TFT) backplane technology for high information content flexible organic light emitting diode (OLED) displays has been developed. We have fabricated 4.1-in. diagonal OLED backplanes on the Flexible Display Center’s six-inch wafer-scale pilot line using ZIO as the active layer. The ZIO based TFTs exhibited an effective saturation mobility of 18.6 cm2/V-s and a threshold voltage shift of 2.2 Volts or less under positive and negative gate bias DC stress for 10000 seconds. We report on the critical steps in the evolution of the backplane process: the qualification of the low temperature (200°C) ZIO process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays.

Keywords

semiconductingoxidethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f09-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hosono, H., Yasukawa, M., Kawazoe, H., Journal of Non-Crystalline Solids 203 (1996).Google Scholar
2. Itagaki, N., Iwasakil, T., Kumomi, H., Den, T., Nomura, K., Kamiya, T., and Hosono, H., Phys Stat. Sol.(a) 205, No. 8, 1915–1919 (2008).Google Scholar
3. Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., and Keszler, D. A., Applied Physics Letters 86, 013503 (2005).Google Scholar
4. Hosono, H., Journal of Non-Crystalline Solids 352 (2006) 851–858.Google Scholar
5. Nishii, J., Hossain, F. M., Takagi, S., Aita, T., Jpn. J. Appl. Phys. Vol. 42 (2003).Google Scholar
6. Jeong, J. K., Yang, H. W., Jeong, J. H., Mo, Y. G., and Kim, H. D., Appl. Phys. Lett. 93 (2008)Google Scholar
7. Chong, E., Jo, K. C., and Lee, S. Y., Applied Physics Letters 96 (2010).Google Scholar
8. Kuo, Yue, ed. “Thin Film Transistors Materials and Processes, Volume 1: Amorphous Silicon Thin Film Transistors” Kluwer Academic Publishers, Boston, (2004)Google Scholar
9. Park, J. S., Jeong, J. K., Mo, Y. G., Kim, H. D., Kim, S.I., Applied Physics Letters 90, (2007).Google Scholar
10. Ito, N., Sato, Y., Song, P. K., Kaijio, A., Inoue, K., Thin Solid Films 496 (2006).Google Scholar
11. Gorrn, P., Sander, M., Meyer, J., Kroger, M., and Becker, E., Adv. Mater., Vol. 18 (2006).Google Scholar
12. Venugopal, S. M., Marrs, M. A., Kaftanoglu, K., Dey, A., Wilson, J. R., Bawolek, E. J., Allee, D. R. and Loy, D., IEEE JDT, 2010 Google Scholar
13. O’Rourke, S. M., Loy, D. P., Moyer, C. D., Bawolek, E. J., Ageno, S. K., O’Brien, B. P., , M. A. Marrs ECS Transactions, 16(9) 49–54 (2008)Google Scholar
14. Yang, X., Wang, Z., Madakuni, S., Li, J., Applied Physics Letters 93, 2008.Google Scholar