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Low-dislocation-density Nonpolar AlN Grown on 4H-SiC (11-20) Substrates

Published online by Cambridge University Press:  01 February 2011

Jun Suda ,
Masahiro Horita  and
Tsunenobu Kimoto
Jun Suda
Affiliation:
suda@kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering, Katsura, Nishikyo-ku, Kyoto, 6158510, Japan
Masahiro Horita
Affiliation:
horita@semicon.kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering, Katsura, Nishikyo-ku, Kyoto, 6158510, Japan
Tsunenobu Kimoto
Affiliation:
kimoto@kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering, Katsura, Nishikyo-ku, Kyoto, 6158510, Japan
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Abstract

Growth of AlN on 4H-SiC (11-20) substrates by plasma-assisted molecular-beam epitaxy is presented. Very high-quality AlN can be grown under a slightly Al-rich condition. Transmission electron microscopy revealed that the AlN layer has 4H crystalline structure with high-phase purity (stacking-fault density is 5×106cm−1) and the density of threading dislocations is as small as 8×107cm−2.

Keywords

nitridemolecular beam epitaxy (MBE)structural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I06-03
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Onojima, N., Suda, J., and Matsunami, H., Jpn. J. Appl. Phys. 42, L445 (2003).Google Scholar
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3. Armitage, R., Suda, J., and Kimoto, T., Appl. Phys. Lett., 88, 011908 (2006).Google Scholar