Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-14T04:51:09.442Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-noise, Low-dark-current GaN Diodes for UV Detectors

Published online by Cambridge University Press:  17 March 2011

Peter W. Deelman ,
Robert N. Bicknell-Tassius ,
Sergey Nikishin  and
Henryk Temkin
Peter W. Deelman
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
Robert N. Bicknell-Tassius
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
Sergey Nikishin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
Henryk Temkin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
Get access

Abstract

We report mesa-isolated Schottky barrier photodetectors fabricated on n-GaN. Single-element detectors were constructed from nitride epilayers grown by gas source molecular beam epitaxy (GSMBE) on Si(111). Chlorine-based reactive ion etching was used to form two-level mesas. The detectors were front-illuminated through 100 Å Pd semitransparent Schottky contacts on the upper mesas; ohmic contact on the lower mesas was made using standard Ti/Al/Ti/Au metallurgy. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation. The dark current of an 86 × 86 µm2 single-element detector is 2.10 × 10−8 A/cm2 at –2 V bias, and the zero-bias noise power density at 1Hz is as low as 9 × 10−29 A2/Hz. In addition, we present preliminary results for p-n diodes fabricated from epilayers grown on sapphire. The dark current of a 50 × 50 µm2 single-element detector is 1.6 × 10−6 A/cm2 at –2 V bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.27
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Joseph, C. L., Experimental Astronomy 6, 97 (1995).Google Scholar
2. Joseph, C. L., “UV detective quantum efficiency measurements,” in Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III, Fineschi, S., Woodgate, B. E. and Kimble, R. A., Eds., Proceedings of SPIE Vol. 3764, 246 (1999).Google Scholar
3. Zhao, Z. M., Jiang, R. L., Chen, P., Xi, D. J., Luo, Z. Y., Zhang, R., Shen, B., Chen, Z. Z., and Zheng, Y. D., Applied Physics Letters 77, 444 (2000).Google Scholar
4. Osinsky, A., Gangopadhyay, S., Yang, J. W., Gaska, R., Kuksenkov, D., Temkin, H., Shmagin, I. K., Chang, Y. C., Muth, J. F., and Kolbas, R. M., Applied Physics Letters 72, 551 (1998).Google Scholar
5. Pau, J. L., Monroy, E., Naranjo, F. B., Muñoz, E., Calle, F., Sánchez-Garcia, M. A., and Calleja, E., Applied Physics Letters 76, 2785 (2000).Google Scholar
6. Hove, J. M. van, Hickman, R., Klaassen, J. J., Chow, P. P., and Ruden, P. P., Applied Physics Letters 70, 2282 (1997).Google Scholar
7. Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., L. Grave de Peralta, Seryogin, G. A., Temkin, H., Prokofyeva, T. I., Holtz, M., and Chu, S. N. G., Applied Physics Letters 75, 2073 (1999).Google Scholar
8. Nikishin, S. A., Antipov, V. G., Francoeur, S., Faleev, N. N., Seryogin, G. A., Elyukhin, V. A., Temkin, H., Prokofyeva, T. I., Holtz, M., Konkar, A., and Zollner, S., Applied Physics Letters 75, 484 (1999).Google Scholar
9. Zhou, L., Lanford, W., Ping, A. T., Adesida, I., Yang, J. W., and Khan, M. A., Applied Physics Letters 76, 3451 (2000).Google Scholar
10. Osinsky, A., Gangopadhyay, S., Gaska, R., Williams, B., Khan, M. A., Kuksenkov, D., and Temkin, H., Applied Physics Letters 71, 2334 (1997).Google Scholar
11. Wang, L., Nathan, M. I., Lim, T. H., Khan, M. A., and Chen, Q., Applied Physics Letters 68, 1267 (1996).Google Scholar
12. Chen, Q., Yang, J. W., Osinsky, A., Gangopadhyay, S., Lim, B., Anwar, M. Z., Khan, M. A., Kuksenkov, D., and Temkin, H., Applied Physics Letters 70, 2277 (1997).Google Scholar
13. Adivarahan, V., Simin, G., Yang, J. W., Lunev, A., Khan, M. A., Pala, N., Shur, M., and Gaska, R., Applied Physics Letters 77, 863 (2000).Google Scholar
14. Casey, H. C. Jr, Fountain, G. G., Alley, R. G., Keller, B. P., and Denbaars, S. P., Applied Physics Letters 68, 1850 (1996).Google Scholar