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Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide By Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

Mehmet C. Öztürk ,
Jimmie J. Wortman ,
Yu-Lin Zhong ,
Xiao-Wei Ren ,
Roderick M. Miller ,
F. Scott Johnson ,
Douglas T. Grider  and
David A. Abercrombie
Mehmet C. Öztürk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Jimmie J. Wortman
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Yu-Lin Zhong
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Xiao-Wei Ren
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Roderick M. Miller
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
F. Scott Johnson
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Douglas T. Grider
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
David A. Abercrombie
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
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Abstract

Low-pressure chemical vapor deposition of polycrystalline silicon and silicon dioxide in a lampheated cold-wall rapid thermal processor have been investigated. Silicon dioxide films have been deposited by thermal decomposition of tetraethylorthosilicate known as TEOS. The technique can be used for rapid deposition of good quality thick passivation layers at moderate temperatures. Polycrystalline silicon depositions have been accomplished using silane (SiH4) diluted in argon as the reactive gas. Surface roughness and resistivity of the films deposited at temperatures above 700°C are comparable in quality to films deposited in a conventional LPCVD reactor at 610°C. In this temperature range, deposition rates as high as 4000Å/min can be obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 109
Copyright
Copyright © Materials Research Society 1989

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References

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