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Low-Temperature Diffusion of Dopants in Silicon

Published online by Cambridge University Press:  25 February 2011

P. Fahey  and
M. Wittmer
P. Fahey
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
M. Wittmer
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

It has been reported that diffusion of substitutional dopant atoms in silicon occurs during the formation of transition-metal suicides at temperatures below 300°C. By observing the diffusion enhancements of buried marker layers of Sb-, Ga-, Ge-, and B-doped silicon layers, we provide solid experimental evidence that the diffusion enhancement induced by Pd2Si formation at low temperatures is due to point defects generated by the suicide reactions. Diffusion enhancement is observed at temperatures as low as 200°C. We have found the surprising result that diffusion is asymmetric: diffusion occurs preferentially towards the suiciding interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 529
Copyright
Copyright © Materials Research Society 1990

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