Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-28T14:11:23.324Z Has data issue: false hasContentIssue false
  • English
  • Français

LPCVD Tungsten Deposition on Porous Silicon for Formation of Buried Conductors

Published online by Cambridge University Press:  28 February 2011

S. S. Tsao  and
R. S. Blewer
S. S. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
R. S. Blewer
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
Get access

Abstract

We report results on the feasibility of forming buried conductors under single crystal silicon using low pressure chemical vapor deposition of tungsten on the internal surfaces of porous silicon. The infiltration of tungsten into the pores depends on the porous silicon porosity, and on tungsten deposition process parameters such as deposition duration, total deposition pressure, and carrier gas species. The resulting tungsten-porous silicon layers were characterized by transmission and scanning electron microscopy, by Rutherford backscattering and x-ray spectroscopy and by four-point probe resistivity measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 199
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Wordeman, M. R., Dennard, R. H., and Sai-Halasz, G. A., Technical Digest, IEEE IEDM, 40 (1981).Google Scholar
2.Sai-Halasz, G. A., Wordeman, M. T. and Dennard, R. H., IEEE Trans. Elect. Devices ED–20, 725 (1982).Google Scholar
3.Yamada, I., Inokawa, H. and Takagi, T., Nuclear Instr. Meth. Phys. Res. B6, 439 (1985).Google Scholar
4.Nesbit, L., Technical Digest, IEEE IEDM, 800 (1984).Google Scholar
5.Beale, M. I. J., Chew, N. G., Uren, M. J., Cullis, A. G. and Benjamin, J. D., Appl. Phys. Lett. 46, 86 (1985).Google Scholar
6.Blewer, R. S. and Wells, V. A., in Proc. 1st Int. VLSI Multilevel Interconnect Conf., IEEE Cat. No. 84CH1999-2, 143 (1984). Also see R. S. Blewer, Technical Digest, IEEE IEDM, 852 (1984).Google Scholar
7.Tracy, M. E., in Proc. of the Workshop on Tungsten and Other Refractory Metals for VLSI Applications, edited by Blewer, R. S., Materials Research Society (in press).Google Scholar
8.Unagami, T., J. Electrochem. Soc. 127, 476 (1980)Google Scholar
9.Bilenko, D., Aban'shin, N., Galishnikova, N., Markelova, G., Mysenko, I., and Khasina, E., Soy. Phys. Semiconductors 17, 1336 (1983).Google Scholar