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Luminescence And Structural Properties Of InGaN Epilayer, Quantum Well And Quantum Dot Samples Using Synchrotron Excitation

Published online by Cambridge University Press:  17 March 2011

K.P. O'Donnell
Affiliation:
Dept of Physics and Applied Physics, Strathclyde University, Glasgow G4 0NG, Scotland, UK
R.W. Martin
Affiliation:
Dept of Physics and Applied Physics, Strathclyde University, Glasgow G4 0NG, Scotland, UK
M.E. White
Affiliation:
Dept of Physics and Applied Physics, Strathclyde University, Glasgow G4 0NG, Scotland, UK
M.J. Tobin
Affiliation:
CLRC Daresbury Laboratories, Warrington, WA4 4AD, England, UK
J.F.W. Mosselmans
Affiliation:
CLRC Daresbury Laboratories, Warrington, WA4 4AD, England, UK
I.M. Watson
Affiliation:
Institute of Photonics, Strathclyde University, Glasgow G4 0NW, Scotland, UK
B. Damilano
Affiliation:
CRHEA/CNRS, Valbonne, France
N. Grandjean
Affiliation:
CRHEA/CNRS, Valbonne, France
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Abstract

The Daresbury synchrotron radiation source (SRS) provides bright, tunable x-rays for scattering and absorption probes of local structure. Scanning confocal microscopy and luminescence decay measurements employ the SRS in alternative ways, as a tunable luminescence excitation engine and as a source of weak, 160 ps pulses with a large pulse-topulse separation, respectively. This report first describes local atomic structure studies of InGaN epilayers by extended x-ray absorption fine structure (EXAFS). In addition, we report photoluminescence (PL) imaging, PL microspectroscopy and photoluminescence decay studies of various nitride samples, including tailored InGaN quantum wells and discs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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