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Luminescence Due to Mn Doped GaP

Published online by Cambridge University Press:  25 February 2011

Teresa Monteiro  and
Estela Pereira
Teresa Monteiro
Affiliation:
Departamento e Centro de Fisica (INIC), Universidade de Aveiro, Portugal
Estela Pereira
Affiliation:
Departamento e Centro de Fisica (INIC), Universidade de Aveiro, Portugal
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Abstract

In n-type GaP doping with Mn gives rise to a deep centre due to Mn+2. Its luminescence occurs in the near infrared.

The behaviour of this centre is studied as a function of temperature and the thermal quenching of the luminescence interpreted as due to a non-radiative process to the ground state. The behaviour of another band that appears upon doping with Mn is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 215
Copyright
Copyright © Materials Research Society 1990

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