Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-10T05:20:32.525Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence from SiOx Nanoclusters

Published online by Cambridge University Press:  28 February 2011

Paul wickboldt ,
Hyeonsik M. Cheong ,
Dawen Pang ,
Joseph H. Chen  and
William paul
Paul wickboldt
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Hyeonsik M. Cheong
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Dawen Pang
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Joseph H. Chen
Affiliation:
Department of Physics, Boston College, Chestnut Hill, MA 02167
William paul
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Get access

Abstract

SiOx nanoclusters (7 nm to 17 nm) are produced by evaporation of SiO (or Si) in Ar (+O2) atmospheres. Room temperature photoluminescence (PL) measurements in vacuum reveal a broad band centered at 1.65 eV. Upon exposure to gas this PL band is extinguished in a matter of seconds, and another band centered at 2.12 eV appears. This effect occurs regardless of the gas used (He, Ar, N2, O2, H2O vapor or air) and is entirely reversible upon evacuation.

Transmission electron microscopy (TEM), Raman, infrared transmission, and X-ray photoluminescence spectroscopy (XPS) measurements are used to characterize the clusters. They are noncrystalline, and the oxidation state is a suboxide rather than SiO2 The PL spectra are independent of cluster size. The PL does not occur without sufficient oxidation and does not require the presence of bonded hydrogen. We are led to speculate that the radiative recombination occurs in electron states derived from a suboxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 127
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Canham, L.T., Appl. Phys. Lett. 57 (10), 1046 (1990).Google Scholar
2 See for example: Prokes, S.M., Glembocki, O.J., Bermudez, V.M., Kaplan, R., Friedersdorf, L.E. and Searson, P.C., Phys. Rev. B 45, 13788 (1992); M.S. Brandt, H.D. Fuchs, M. Stutzmann, J. Weber and M. Cardona, Solid State Commun. 81 (4), 307 (1992); F. Koch, V. Petrova-Koch, T.Muschik, A. Nikolov, and V. Gavrilenko, Mat. Res. Soc. Symp. Proc. 283, 197 (1992); and Y. Kanemitsu, Phys. Rev. B 48, 12357 (1993)Google Scholar
3 See for example: Macaulay, J.M., Ross, F.M., Searson, P.C., Sputz, S.K., People, R., and Friedersdorf, L.E., Mat. Res. Soc. Symp. Proc. 256, 47 (1992).Google Scholar
4 Nozaki, S., Sato, S., Ono, H. and Morisaki, H., presented at the 1994 Spring Meeting of the Materials Research Society, Symposium V: Nano-Structured Materials, San Fransisco, April 4-8, 1994 (unpublished).Google Scholar
5 Morisaki, H., Ping, F.W., Ono, H. and Yazawa, K., J. Appl. Phys. 70 (3), 1869 (1991).Google Scholar
6 Hollinger, G. and Himpsel, F. J., Appl. Phys. Lett. 44 (1), 93 (1984).Google Scholar