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Luminescence Properties of As, P, and Bi as Isoelectronic Traps in GaN

Published online by Cambridge University Press:  10 February 2011

W. M. Jadwisienczak  and
H. J. Lozykowski
W. M. Jadwisienczak
Affiliation:
School of Electrical Engineering & Computer Science, and Condensed Matter & Surface Sciences Program, Ohio University, Stocker Center, Athens, OH, 45701
H. J. Lozykowski
Affiliation:
School of Electrical Engineering & Computer Science, and Condensed Matter & Surface Sciences Program, Ohio University, Stocker Center, Athens, OH, 45701
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Abstract

Photoluminescence spectra of high quality GaN epilayers, grown by MOCVD on sapphire substrates and implanted by isoelectronic ions: As, P, and Bi, were investigated. Post implant annealing was done at temperatures of up to 1150 °C, in a tube furnace under flowing NH3 or N2, and in a rapid thermal annealing system in ambient of N2. The PL of GaN: P annealed at 1150 °C in NH 3 exhibited strong pair-type modulated structures on the short wavelength shoulder of an emission band.The band at 2.914 eV is due to the recombination of bound exciton to P-hole isoelectronic traps (P-BE), and the modulated structure results from electron-hole recombination at pairs of neutral donors and a hole on P isoelectronic traps. The PL of GaN: As, GaN: Bi showed an emission with peaks at 2.597 eV and 3.241 eV, due to the recombination of an exciton bond to As and Bi isoelectronic-hole traps. We also studied thermal quenching excitation spectra, and PL kinetics. The experimental results are discussed using a simple spherical potential-well model for isoelectronic traps: As, P, and Bi replacing nitrogen in GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1033
Copyright
Copyright © Materials Research Society 1998

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