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Luminescence Study of Self-Assembled, Silicon Quantum Dots

Published online by Cambridge University Press:  09 August 2011

S. Miyazaki ,
K. Shiba ,
N. Miyoshi ,
K. Etoh ,
A. Kohno  and
M. Hirose
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University Kagamiyama 1-4-1, Higashi-Hiroshima 739–8527, Japan
K. Shiba
Affiliation:
Department of Electrical Engineering, Hiroshima University Kagamiyama 1-4-1, Higashi-Hiroshima 739–8527, Japan
N. Miyoshi
Affiliation:
Department of Electrical Engineering, Hiroshima University Kagamiyama 1-4-1, Higashi-Hiroshima 739–8527, Japan
K. Etoh
Affiliation:
Department of Electrical Engineering, Hiroshima University Kagamiyama 1-4-1, Higashi-Hiroshima 739–8527, Japan
A. Kohno
Affiliation:
Department of Electrical Engineering, Hiroshima University Kagamiyama 1-4-1, Higashi-Hiroshima 739–8527, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Kagamiyama 1-4-1, Higashi-Hiroshima 739–8527, Japan
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Abstract

Hemispherical silicon quantum dots (QDs) have been self-assembled with an areal density as high as ~2−1011 cm−2 on SiO2/Si(100) and quartz substrates by controlling the early states of low pressure chemical vapor deposition (LPCVD) of pure silane. It is found that, for the thermally-oxidized Si QDs, when the mean Si dot height is decreased from 6.3 nm to 1~2 nm, the photoluminescence (PL) peak energy is increased from 1.2 to 1.4 eV at room temperature while the optical absorption edge determined by photothermal deflection spectroscopy is shifted from 1.9 to 2.5 eV. In addition to the observed Stokes shift as large as 0.7−1.1 eV, a weak temperature dependence of the broad luminescence band and non-exponential luminescence decay with a mean life time of sub-msec even at room temperature suggest that localized, radiative recombination centers existing presumably in the SiO2/Si dot interface are responsible for the efficient PL from the Si QDs. From the change in room temperature PL by SiO2 thinning and removal in a dilute HF solution, it is demonstrated that the surface passivation of Si QDs plays an important role for the efficient light emission at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 45
Copyright
Copyright © Materials Research Society 1999

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References

1. Canham, L. T.: Appl. Phys. Lett. 57 (1990) 1046.Google Scholar
2. Lehmann, V. and Gösele, U.: Appl. Phys. Lett 58 (1991) 856.Google Scholar
3. Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A. and Nakagiri, T.: Appl. Phys. Lett. 56 (1990) 2379.Google Scholar
4. Kanemitsu, Y., Ogawa, T., Shiraishi, K. and Takeda, K.: Phys. Rev. B 48 (1994) 4883.Google Scholar
5. Yamada, Y., Orii, T., Umezu, I., Takeyama, S. and Yoshida, T.: Jpn. J. Appl. Lett. 35 (1996) 1361.Google Scholar
6. Nakajima, A., Sugita, Y, Kawamura, K., Tomita, H. and Yokoyama, N.: Jpn. J. Appl. Phys. 35 (1996) L189.Google Scholar
7. Nakagawa, K., Fukuda, M., Miyazaki, S. and Hirose, M.: Mat. Res. Soc. Symp. Proc. 452 (1997) 234.Google Scholar
8. Fukuda, M., Nakagawa, K., Miyazaki, S. and Hirose, M.: Appl. Phys. Lett. 70 (1997) 2291.Google Scholar
9. S. Tiwari, Rana, F., Hanafi, H., Hartstein, H., Crabbé, E. F and Chen, K.: Appl. Phys. Lett. 68 (1996) 1377.Google Scholar
10. Guo, L., Leobandung, E. and Chou, S. Y.: Technical Digest of 1996 Intern. Electron Device Meeing (San Francisco, 1996) p. 955.Google Scholar
11. Khono, A., Murakami, Ikeda, M., Miyazaki, S. and Hirose, M.: Extended Abstracts of the 1997 Intern. Conf. on Solid State Devices and Materials (Hamamatsu, 1997) p. 566; Extended Abstracts of the 1998 Intern. Conf. on Solid State Devices and Materials (Hiroshima, 1998) p. 174.Google Scholar
12. Irani, R. R. and Callis, C. F.: Particle Size Measurement: Interpretation and Application (Wiley, New York, 1976) p. 135.Google Scholar
13. Shiba, K., Nakagawa, K., Ikeda, M., Kohno, A., Miyazaki, S. and Hirose, M.: Jpn. J. Appl. Phys. 36 (1997) L1279.Google Scholar
14. Takagahara, T. and Takeda, K.: Phys. Rev. B 46 (1992) 15578.Google Scholar