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Magnetostriction and Stress in High Moment FeTaN Films

Published online by Cambridge University Press:  03 September 2012

J. C. Cates ,
G. Qiu ,
E. Haftek ,
C. Alexander Jr  and
J. A. Barnard
J. C. Cates
Affiliation:
The University of Alabama, The Department of Physics and Astronomy, Tuscaloosa, AL 35487–0202
G. Qiu
Affiliation:
The University of AlabamaThe Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
E. Haftek
Affiliation:
The University of AlabamaThe Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
C. Alexander Jr
Affiliation:
The University of Alabama, The Department of Physics and Astronomy, Tuscaloosa, AL 35487–0202 The University of AlabamaThe Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
J. A. Barnard
Affiliation:
The University of AlabamaThe Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
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Abstract

Magnetostriction and thin film stress have been studied in high moment single layer FeTaN films deposited by high rate reactive dc magnetron sputtering. Low Magnetostriction (Magnitude less than 1 × 10-6) can be obtained over a fairly large range of nitrogen flow rates during film deposition by vacuum annealing at 500°C. After annealing at 500°C for two hours, all films were found to be in a state of tensile stress. Stress versus temperature measurements up to 400°C show film stress in as-deposited films to be highly hysteretic during the first temperature cycle reflecting the films' processing history. Stress-temperature cycles on annealed samples indicate that extremely stable films are produced in an intermediate range of nitrogen content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 313: Symposium Q1 – Magnetic Ultrathin Films, Multilayers and Surfaces/Magnetic Interfaces-Physics and Characterizations , 1993 , 345
Copyright
Copyright © Materials Research Society 1993

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References

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