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Manipulating InAs Dots with GaAs Patterns: Effect of GaAs Buffer Layer Growth and Pattern Profiles

Published online by Cambridge University Press:  10 February 2011

Søren Jeppesen ,
Maria Gerling ,
Lars Samuelson  and
Mark S. Miller
Søren Jeppesen
Affiliation:
Solid State Physics, Lund University, 221 00 Lund, Sweden
Maria Gerling
Affiliation:
Solid State Physics, Lund University, 221 00 Lund, Sweden
Lars Samuelson
Affiliation:
Solid State Physics, Lund University, 221 00 Lund, Sweden
Mark S. Miller
Affiliation:
Dept. of Electrical Engineering, Univ. of Virginia, Charlottesville, VA
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Abstract

We report on our efforts to selectively place chemical beam epitaxy grown Stranski-Krastanov InAs dots on GaAs patterns. The pattern profiles for placement depends on the growth conditions of a GaAs buffer layer grown on the lithographic patterns. Because we seek to suppress dot formation on (100)-oriented surfaces outside of the features, we investigated the effects buffer layer growth conditions have on dot nucleation using reflected high energy electron diffraction, atomic force microscopy and photo-luminescence. We conclude that buffer conditions favorable for patterns have negligible effect on the dots formed on the (100)- oriented surface, and that selective dot placement can be engineered by As pressure, InAs deposition and buffer growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 319
Copyright
Copyright © Materials Research Society 2000

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References

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