Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-29T12:11:30.353Z Has data issue: false hasContentIssue false
  • English
  • Français

Manipulation of amorphous Ge2Sb2Te5 nano-structures in isolated and crystalline environment.

Published online by Cambridge University Press:  30 June 2011

A. M. Mio ,
G. D’Arrigo ,
E. Carria ,
C. Bongiorno ,
S. Rossini ,
C. Spinella ,
M. G. Grimaldi  and
E. Rimini
A. M. Mio
Affiliation:
Dipartimento di Fisica e Astronomia, Università di Catania, 64 via S. Sofia, I-95123 Catania, Italy
G. D’Arrigo
Affiliation:
IMM-CNR, 50 Stradale Primosole, I-95121 Catania, Italy
E. Carria
Affiliation:
Dipartimento di Fisica e Astronomia, Università di Catania, 64 via S. Sofia, I-95123 Catania, Italy MATIS-IMM-CNR, 64 via S. Sofia, I-95123 Catania, Italy
C. Bongiorno
Affiliation:
IMM-CNR, 50 Stradale Primosole, I-95121 Catania, Italy
S. Rossini
Affiliation:
Micron Semiconductor Italia S.r.l.
C. Spinella
Affiliation:
IMM-CNR, 50 Stradale Primosole, I-95121 Catania, Italy
M. G. Grimaldi
Affiliation:
Dipartimento di Fisica e Astronomia, Università di Catania, 64 via S. Sofia, I-95123 Catania, Italy MATIS-IMM-CNR, 64 via S. Sofia, I-95123 Catania, Italy
E. Rimini
Affiliation:
IMM-CNR, 50 Stradale Primosole, I-95121 Catania, Italy
Get access

Abstract

We have investigated the stability of nano-amorphous region of Ge2Sb2Te5 (GST), fabricated by Electron Beam Lithography (EBL), dry etching, and ion implantation. Nano-structures, less than 100 nm in diameter and 20 nm thick, were either embedded in a crystalline environment or just isolated. We have observed nano-structure crystallization by in situ Transmission Electron Microscopy (TEM) in the 75°C-150°C temperature range. Re-crystallization of amorphous dots embedded in a crystalline region (either in the cubic or hexagonal phase) occurs by the movement of the interface at relatively low temperature (about 90°C). Instead, in the isolated structures the transition occurs at about 145°C by nucleation and growth. These results might be of relevance for the data retention of sub-50nm devices. Indeed, the more stable amorphous phase in self-standing regions indicates the better retention properties of isolated cells with respect to the traditional mushroom cell configuration.

Keywords

ion-implantationnanostructurenucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1338: Symposium R – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2011 , mrss11-1338-r06-08
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Friedrich, I., Weidenhof, V., Njoroge, W., Franz, P., and Wuttig, M., J. Appl. Phys. 87, 4130 (2000).Google Scholar
[2] Lee, T. Y., Yim, S. S., Lee, D., Lee, M. H., Ahn, D. H., and Kim, K. B., Appl. Phys. Lett. 89, 163503 (2006).Google Scholar
[3] Pirovano, A., Lacaita, A. L., Benvenuti, A., Pellizzer, F., Pirovano, A. and Bez, R., IEEE Trans Electron Devices 51, 452 (2004).Google Scholar
[4] Weidenhof, V., Friedrich, I., Ziegler, S. and Wuttig, M. J. Appl. Phys. 89, 3168 (2001).Google Scholar
[5] Matsunaga, T., Yamada, N. and Kabota, Y., Acta Crystallogr. Sect. B 60, 685 (2004).Google Scholar
[6] Raoux, R., Burr, G.W., Breitwisch, M.J., Rettner, C.T., Chen, Y.-C., Shelby, R.M., Salinga, M., Krebs, D., Chen, S.-H., Lung, H.-L. and Lam, C.H., IBM J. Res. & Dev. 52, 465 (2008).Google Scholar
[7] Mio, A.M., Carria, E., D’Arrigo, G., Gibilisco, S., Miritello, M., Grimaldi, M.G. and Rimini, E., J. Non-Cryst. Solids 357 (2011) pp. 2197–2201.Google Scholar
[8] Nam, S.-W., Lee, T.-Y., Wi, J.-S., Lee, D., Lee, H.-S., Jin, K.-B., Lee, M.-H., Kim, H.-M. and Kim, K.-B., J. Electrochem. Soc., 154, pp. H844-H847 (2007).Google Scholar
[9] Ziegler, J. F., Biresack, J. P., and Littmark, U., The Stopping and the Range of Ions in Solids Pergamon, New York, (1985).Google Scholar
[10] Kalb, J., Spaepen, F. and Wuttig, M., Appl. Phys. Lett. 84, 5240 (2004).Google Scholar
[11] Washington, J. S., Joseph, E. A., Raoux, S., Jordan-Sweet, L., Miller, D., Cheng, H.-Y., Schrott, A. G., Chen, C.-F., Dasaka, R., Shelby, B., Lucovsky, G., Paesler, M. A., Miotti, L., Lung, H.-L., Zhang, Y. and Lam, C. H., J. Appl. Phys. 109, 034502 (2011).Google Scholar