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MANOS erase performance dependence on nitrogen annealing conditions

Published online by Cambridge University Press:  03 March 2015

Vassilios Ioannou-Sougleridis ,
Nikolaos Nikolaou ,
Panagiotis Dimitrakis ,
Pascal Normand ,
Dimitrios Skarlatos ,
Anastasios Travlos ,
Kaupo Kukli ,
Jaakko Niinisto ,
Mikko Ritala  and
Markku Leskela
Vassilios Ioannou-Sougleridis
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens , Greece
Nikolaos Nikolaou
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens , Greece Department of Physics, University of Patras, Patras Greece
Panagiotis Dimitrakis
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens , Greece
Pascal Normand
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens , Greece
Dimitrios Skarlatos
Affiliation:
Department of Physics, University of Patras, Patras Greece
Anastasios Travlos
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens , Greece
Kaupo Kukli
Affiliation:
Department of Chemistry, University of Helsinki, Helsinki Finland Institute of Physics, University of Tartu, Tartu Estonia
Jaakko Niinisto
Affiliation:
Department of Chemistry, University of Helsinki, Helsinki Finland
Mikko Ritala
Affiliation:
Department of Chemistry, University of Helsinki, Helsinki Finland
Markku Leskela
Affiliation:
Institute of Physics, University of Tartu, Tartu Estonia
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Abstract

In this work we examine the electrical characteristics and the memory properties of metal-alumina-nitride-oxide-silicon (MANOS) devices as a function of the post deposition annealing conditions. Post deposition annealing of the samples was performed at 850 or 1050 °C in nitrogen ambient using two different processes: (1) Furnace annealing for 15 min and (2) rapid thermal annealing for 1 or 5 min. The capacitance equivalent thickness as extracted from the capacitance voltage characteristics depends strongly on the annealing process, being smallest for the furnace annealing. Furthermore, the experimental results indicate that the type of the annealing determines the defect state density of the Al2O3 layer, via which the undesired effect of gate electrode electron injection takes place in the negative voltage regime. For inert ambient annealing the furnace process appears more efficient as compared to RTA.

Keywords

atomic layer depositionmemorydevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 15 - 20
Copyright
Copyright © Materials Research Society 2015 

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References

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