Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-14T17:05:49.834Z Has data issue: false hasContentIssue false
  • English
  • Français

Materials Characterization on Optically Pumped InGaN/GaN Lasers by Farfield Measurements and Fourier Analysis of the Emission Spectrum

Published online by Cambridge University Press:  10 February 2011

D. Hofstetter ,
R. L. Thornton ,
L. T. Romano ,
D. P. Bour  and
N. M. Johnson
D. Hofstetter
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. L. Thornton
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
L. T. Romano
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. P. Bour
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

We report materials characterization on optically pumped InGaN/GaN lasers by farfield and spectral measurements. Through a comparison between measured and calculated farfield data for an In0.15Ga0.85N/In0.05Ga0.95N multi quantum well laser structure with AIGaN cladding layers, we could extract important information about the optical confinement in the transverse direction. The analysis of Fourier-transformed emission spectra of our devices allowed us to make qualitative statements about the material quality in terms of surface pits and cracks. We believe that optical pumping with these supplementary techniques is an important and powerful tool which helps to overcome critical material quality requirements in gallium-nitride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1059
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H.. and Sugimoto, Y., InGaN-based Multi-Quantum-Well-Structure Laser Diodes, Jpn. J. Appl. Phys., 35, pp. L74–L76 (1996)Google Scholar
2. Bour, D.P., Chung, H.F.. Götz, W., Romano, L., Krusor, B.S., Ponce, F.A., Johnson, N.M., and Bringans, R.D., Characterization of AlGaInN Heterostructures grown by OMVPE, Electrochemical Society Proceedings 96–11, pp. 37–41 (1996)Google Scholar
3. Amano, H., Tanaka, T., Kunii, Y., Kim, S.T., and Akasaki, I., Room-temperature violet stimulated emission from optically pumped AlGaN/InGaN double heterostructure, Appl. Phys. Lett., 64, pp. 1377–1379 (1994)Google Scholar
4. Hofstetter, D., Bour, D.P., Thornton, R.L., and Johnson, N.M., Excitation of a higher order transverse mode in an optically pumped In0 15Ga0.85N/In0.05Ga0.95N multi quantum well laser structure, Appl. Phys. Lett., 70, pp. 1650–1652 (1997)Google Scholar
5. Liau, Z.L., Aggarwal, R.L., Maki, P.A., Molnar, R.J., Walpole, J.N., Williamson, R.C., and Melngailis, I., Light scattering in high-dislocation-density GaN, Appi. Phys. Lett., 69, pp. 1665–1667 (1996)Google Scholar
6. Dyment, J.C., Hermite-Gaussian mode patterns in GaAs junction lasers, Appl. Phys. Lett., 10, pp. 84–85 (1967)Google Scholar
7. Romano, L.T., Krusor, B.S., Gltz, W., Johnson, N.M., Molnar, R.J., and Brown, E., Structural characterization of thick GaN films grown by hydride vapor phase epitaxy, Proc. Materials Research Society. pp. 443–448 (1996)Google Scholar