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Mathematical Modelling of Roughness-Temperature Evolution

Published online by Cambridge University Press:  10 February 2011

S. Nedelcu  and
N. Moldovan
S. Nedelcu
Affiliation:
Institute of Microtechnology, P.O.Box: 38-160, 72225 Bucharest, Romania, sorinn@imt.ro
N. Moldovan
Affiliation:
Institute of Microtechnology, P.O.Box: 38-160, 72225 Bucharest, Romania, sorinn@imt.ro
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Abstract

Orientation -dependent etching of silicon in alkaline solutions is close to get a satisfactory model by considering the random Si-Si bond breaking algorithms (BBA). Here we report our progress regarding the simulation of the atomic-scale roughness of the etched surface, by considering the influence of the processing temperature. We chose the model parameters to fit the experimental data for the etching rate angular dependence for 80°C. We supposed an Arrhenius type dependence on temperature for the basic bond-breaking probabilities and obtained the etching rate and roughness dependence on temperature. The temperature dependence of the etching rates showed the main features of the experimental data: an increase of the etching rate with temperature, a slight change of anisotropy and an increase of the roughness. Further investigations showed we could be close to a roughening transition, which manifests mainly along the directions of the etching rate maxima.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 529: Symposia BB – Computational & Mathematical Models of Microstructural Evolution , 1998 , 163
Copyright
Copyright © Materials Research Society 1998

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References

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